N Channel Enhancement Mode MOSFET BORN SI2310 Featuring High Density Cell Design and SOT 23 Package
Key Attributes
Model Number:
SI2310
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@4.5V,2A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
16pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
362pF@30V
Pd - Power Dissipation:
1.56W
Gate Charge(Qg):
6.9nC@30V
Mfr. Part #:
SI2310
Package:
SOT-23
Product Description
Product Overview
The SI2310 is an N-Channel Enhancement-Mode MOSFET featuring advanced trench process technology and high-density cell design for ultra-low on-resistance. It offers high power and current handling capability, making it suitable for various applications. This ROHS-compliant MOSFET is available in a SOT-23 package.
Product Attributes
- Brand: BORN
- Type: MOSFET N-Channel Enhancement-Mode
- Compliance: ROHS
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 16 | V | |||
| Drain Current (Note 1) | ID | 3.8 | A | |||
| Power Dissipation (Note 1) | PD | 1560 | mW | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | +150 | C | ||
| Static Electrical Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 60 | V | ||
| Zero Gate Voltage Drain Current (TA=25) | IDSS | VDS=60V, VGS=0V | 1 | A | ||
| Zero Gate Voltage Drain Current (TA=125) | IDSS | VDS=48V, VGS=0V | 100 | uA | ||
| Gate-Body Leakage Current | IGSS | VGS=16V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | 1.0 | 2.0 | 3.0 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=3A | 57 | 70 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=2A | 66 | 90 | m | |
| Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| Input Capacitance | Ciss | VDS=30V, VGS=0V, f=1MHz | 362 | pF | ||
| Output Capacitance | Coss | 23 | pF | |||
| Reverse Transfer Capacitance | Crss | 16 | pF | |||
| Gate Resistance | Rg | f=1MHz | 9 | |||
| Total Gate Charge | Qg | VDS=30V, ID=4A, VGS=10V | 6.9 | nC | ||
| Gate Source Charge | Qgs | 0.9 | nC | |||
| Gate Drain Charge | Qgd | 1.8 | nC | |||
| Switching Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| Turn on Delay Time | td(on) | VDD=30V, ID=1A, RG=3.3, VGS=10V | 3.4 | ns | ||
| Turn on Rise Time | tr | 5.8 | ns | |||
| Turn Off Delay Time | td(off) | 21 | ns | |||
| Turn Off Fall Time | tf | 4.6 | ns | |||
| Source Drain Diode Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| Source drain current (Body Diode) | ISD | TA=25 | 2 | A | ||
| Forward on voltage | VSD | Tj=25, ISD=2A, VGS=0V | 0.79 | 1.2 | V | |
Notes:
Pulse width limited by maximum allowable junction temperature.
Pulse test ; Pulse width 300s, duty cycle 2%.
Package Outline: SOT-23 Plastic surface mounted package
2410121847_BORN-SI2310_C431497.pdf
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