N Channel 40 Volt MOSFET Bruckewell MSH40N032 Trench DMOS Technology for Fast Switching Applications
Key Attributes
Model Number:
MSH40N032
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
90A
RDS(on):
3.2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
71pF@20V
Number:
1 N-channel
Input Capacitance(Ciss):
2.648nF@20V
Pd - Power Dissipation:
50W
Gate Charge(Qg):
22.7nC@10V
Mfr. Part #:
MSH40N032
Package:
PDFN5x6-8
Product Description
Product Overview
The MSH40N032 is an N-Channel 40-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), deliver superior switching performance, and provide robust high-energy pulse handling in avalanche and commutation modes. It is ideally suited for high-efficiency, fast-switching applications such as power management in desktop computers, DC/DC converters, and synchronous rectifier applications. The device adheres to RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Technology: Trench DMOS
- Certifications: RoHS Compliant, Green Device Available
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Model Number | N-Channel 40-V (D-S) MOSFET | MSH40N032 | |||
| Drain-Source Voltage (VDS) | 40 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | |||
| Continuous Drain Current (ID) | TC = 25C | 90 | A | ||
| Continuous Drain Current (ID) | TC = 100C | 72 | A | ||
| Pulsed Drain Current (IDM) | 240 | A | |||
| Single Pulse Avalanche Current (IAS) | L = 0.1mH | 54 | A | ||
| Single Pulse Avalanche Energy (EAS) | L = 0.1mH | 145 | mJ | ||
| Power Dissipation (PD) | TC = 25C | 50 | W | ||
| Operating & Storage Temperature | -55 | 150 | C | ||
| Junction-to-Ambient Thermal Resistance (RJA) | Surface mounted on 1 inch² FR-4 board with 2OZ copper | 55 | C/W | ||
| Junction-to-Case Thermal Resistance (RJC) | 2.5 | C/W | |||
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = 250A | 1.2 | 2.2 | V | |
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID = 250A | 40 | V | ||
| Gate-Source Leakage Current (IGSS) | VDS = 0V, VGS = ±20V | ±100 | nA | ||
| Drain-Source Leakage Current (IDSS) | VDS = 40V, VGS = 0V, TJ = 25C | 1 | A | ||
| Drain-Source Leakage Current (IDSS) | VDS = 40V, VGS = 0V, TJ = 55C | 5 | A | ||
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 10V, ID = 20A | 3.2 | m | ||
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 4.5V, ID = 15A | 5.3 | m | ||
| Diode Forward Voltage (VSD) | IS = 1A, VGS = 0V, TJ = 25C | 1.0 | V | ||
| Continuous Source Current (IS) | 30 | A | |||
| Pulsed Source Current (ISM) | 60 | A | |||
| Total Gate Charge (Qg) | VDS = 20V, ID = 20A, VGS = 10V | 22.7 | nC | ||
| Gate-Source Charge (Qgs) | VDS = 20V, ID = 20A, VGS = 10V | 7.5 | nC | ||
| Gate-Drain Charge (Qgd) | VDS = 20V, ID = 20A, VGS = 10V | 5.5 | nC | ||
| Turn-On Delay Time (td(on)) | VDS = 20V, ID = 20A, VGS = 10V, RG = 3 | 10 | ns | ||
| Rise Time (tr) | VDS = 20V, ID = 20A, VGS = 10V, RG = 3 | 5 | ns | ||
| Turn-Off Delay Time (td(off)) | VDS = 20V, ID = 20A, VGS = 10V, RG = 3 | 33 | ns | ||
| Fall Time (tf) | VDS = 20V, ID = 20A, VGS = 10V, RG = 3 | 6.5 | ns | ||
| Input Capacitance (CISS) | VDS = 20V, VGS = 0V, f = 1.0MHz | 2648 | pF | ||
| Output Capacitance (COSS) | VDS = 20V, VGS = 0V, f = 1.0MHz | 899 | pF | ||
| Reverse Transfer Capacitance (CRSS) | VDS = 20V, VGS = 0V, f = 1.0MHz | 71 | pF | ||
| Gate Resistance (Rg) | VDS = 0V, VGS = 0V, f = 1.0MHz | 1.5 | |||
| Package Type | PDFN 5X6 | ||||
| Packing | 3,000/Reel | ||||
2410121637_Bruckewell-MSH40N032_C22374935.pdf
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