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quality Trench DMOS N Channel MOSFET Bruckewell MSHP40N065 40 Volt with Low On Resistance and Pulse Handling factory
quality Trench DMOS N Channel MOSFET Bruckewell MSHP40N065 40 Volt with Low On Resistance and Pulse Handling factory

Trench DMOS N Channel MOSFET Bruckewell MSHP40N065 40 Volt with Low On Resistance and Pulse Handling

Key Attributes
Model Number: MSHP40N065
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
75A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
115pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
83W
Input Capacitance(Ciss):
1.54nF@25V
Gate Charge(Qg):
16.2nC@10V
Mfr. Part #:
MSHP40N065
Package:
PDFN-8(5x6)
Product Description

Product Overview

The MSHP40N065 is an N-Channel 40-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize on-resistance (RDS(ON)), deliver superior switching performance, and provide robust high-energy pulse handling in avalanche and commutation modes. It is ideally suited for high-efficiency, fast-switching applications. The device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Typical applications include MB, VGA, Vcore, POL applications, and SMPS 2nd SR.

Product Attributes

  • Brand: Bruckewell Technology Corporation
  • Technology: Trench DMOS
  • Certifications: RoHS Compliant, Green Device Available
  • EAS Guarantee: 100% EAS Guaranteed
  • Package Type: SO-8PP(5x6)
  • Packing: 3,000/Reel

Technical Specifications

Symbol Parameter Test Conditions Min. Typ. Max. Units
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage ±20 V
ID Continuous Drain Current (TC =25°C) 75 A
ID Continuous Drain Current (TC =100°C) 45 A
IDM Pulsed Drain Current1,2 300 A
IAS Single Pulse Avalanche Current, L =0.1mH3 39 A
EAS Single Pulse Avalanche Energy, L =0.1mH3 76 mJ
PD Power Dissipation4 (TC =25°C) 83 W
PD Power Dissipation4 (TA =25°C) 2 W
TJ/TSTG Operating Junction and Storage Temperature -55 +150 °C
Thermal Resistance Ratings
RθJA Maximum Junction-to-Ambient1 62.5 °C/W
RθJC Maximum Junction-to-Case1 1.5 °C/W
Electrical Characteristics (TJ=25°C unless otherwise specified)
VGS (th) Gate Threshold Voltage VDS =VGS, ID =250µA 1.2 1.6 2.5 V
BVDSS Drain-Source Breakdown Voltage VGS =0V, ID =250µA 40 - - V
gfs Forward Transconductance VDS =3V, ID =4.5A - 16 - S
IGSS Gate-Source Leakage Current VDS =0V, VGS =±20V - - ±100 nA
IDSS Drain-Source Leakage Current VDS =40V, VGS =0V, TJ =25°C
VDS =32V, VGS =0V, TJ =125°C		 - - 1
10		 µA
RDS (on) Static Drain-Source On-Resistance2 VGS =10V, ID =20A
VGS =4.5V, ID =10A		 - 5.6
6.9		 6.5
8.5		 mΩ
EAS Single Pulse Avalanche Energy5 VDD =25V, L =0.1mH, IAS =25A 31 - - mJ
VSD Diode Forward Voltage2 IS =20A, VGS =0V, TJ =25°C - - 1.2 V
IS Continuous Source Current1,6 - - 75 A
ISM Pulsed Source Current2,6 VG =VD =0V, Force Current - - 150 A
Dynamic Characteristics
Qg Total Gate Charge2 VDS =20V, ID =10A, VGS =4.5V - 16.2 - nC
Qgs Gate-Source Charge - 3.85 - nC
Qgd Gate-Drain Charge - 6.05 - nC
td(on) Turn-On Delay Time2 - 13.6 - ns
tr Rise Time - 2.5 - ns
td(off) Turn-Off Delay Time - 68 - ns
tf Fall Time VDS =15V, ID =1A, VGS =10V, RG =6Ω - 5 - ns
CISS Input Capacitance VDS =25V, VGS =0V, f =1.0MHz - 1540 - pF
COSS Output Capacitance - 171 - pF
CRSS Reverse Transfer Capacitance - 115 - pF
Rg Gate Resistance VGS =VDS =0V, f =1.0MHz - 1.4 - Ω

2412061551_Bruckewell-MSHP40N065_C42407745.pdf

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