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quality Low Gate Charge MOSFET BLUE ROCKET BRCS015N04SZC N Channel Type for Battery Management Applications factory
quality Low Gate Charge MOSFET BLUE ROCKET BRCS015N04SZC N Channel Type for Battery Management Applications factory

Low Gate Charge MOSFET BLUE ROCKET BRCS015N04SZC N Channel Type for Battery Management Applications

Key Attributes
Model Number: BRCS015N04SZC
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
170A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
120pF
Number:
1 N-channel
Output Capacitance(Coss):
2nF
Input Capacitance(Ciss):
4.2nF
Pd - Power Dissipation:
65W
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
BRCS015N04SZC
Package:
PDFN-8(5x6)
Product Description

Product Overview

The BRCS015N04SZC is an N-Channel MOSFET designed for battery management applications. It features low RDS(ON) for minimized conductive loss, low Gate Charge for fast switching, and low thermal resistance. This product is also RoHS compliant (HF Product). The MOSFET is housed in a PDFN56 plastic package.

Product Attributes

  • Brand: FS (implied by URL http://www.fsbrec.com)
  • Package Type: PDFN56
  • Channel Type: N-Channel
  • Product Compliance: HF Product (Halogen-Free)
  • Marking Code: BR 015N04S ****

Technical Specifications

Parameter Symbol Rating Unit Test Conditions Min Typ Max
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDS 40 V
Drain Current - Continuous ID 170 A
Drain Current Pulsed IDM 340 A
Gate-Source Voltage VGS 20 V
Power Dissipation PD(Tc=25) 65 W
Single Pulse Avalanche Energy (L=0.5mH) EAS 358 mJ
Avalanche Current (L=0.5mH) IAS 32 A
Junction and Storage Temperature Range Tj, Tstg -55 to 150
Thermal resistance, junction - case RJC 1.9 / W
Thermal resistance, junction - ambient RJA 55 / W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage BVDSS 40 V ID=250uA, VGS=0V 40 46
Zero Gate Voltage Drain Current IDSS uA VDS=40V, VGS=0V 1.0
Gate-Body leakage current IGSS nA VDS=0V, VGS= 20V 100
Gate Threshold Voltage VGS(th) V VDS=VGS, ID=250uA 1 1.9 2.5
Static Drain-Source On-Resistance RDS(ON) m VGS=10V, ID=10A 1.2 1.5
Static Drain-Source On-Resistance RDS(ON) m VGS=4.5V, ID=10A 2.0 2.5
Input Capacitance Ciss pF VDS=25V VGS=0V f=1.0MHz 4200
Output Capacitance Coss pF VGS=0V VDS=0V f=1MHz 2000
Reverse Transfer Capacitance Crss pF 120
Gate resistance Rg 1.0
Total Gate Charge Qg(10V) nC VGS=10V, VDS=20V, ID=20A 52
Total Gate Charge Qg(4.5V) nC 21
Gate Source Charge Qgs nC 12
Gate Drain Charge Qgd nC 5
Turn-On Delay Time td(on) ns VGS=10V, VDS=20V, RL=1, RGEN=3 15
Turn-On Rise Time tr ns 5.8
Turn-Off Delay Time td(off) ns 62
Turn-Off Fall Time tf ns 10

Package Dimensions: PDFN56

Packaging: Reel Package, 5000 Units/Reel

Temperature Profile for IR Reflow Soldering (Pb-Free):

  • Preheating: 150~180, Time: 60~90 sec.
  • Peak Temp.: 2455, Duration: 50.5 sec.
  • Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions: Temp.: 2605, Time: 101 sec.


2410121228_BLUE-ROCKET-BRCS015N04SZC_C22448995.pdf

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