Trench DMOS Dual N Channel 40 Volt MOSFET Bruckewell MSH40N095D for Switching in Electronic Devices

Key Attributes
Model Number: MSH40N095D
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
21A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
2 N-Channel
Input Capacitance(Ciss):
690pF@15V
Pd - Power Dissipation:
8W
Gate Charge(Qg):
5.8nC
Mfr. Part #:
MSH40N095D
Package:
PDFN5x6-8
Product Description

MSH40N095D Dual N-Channel 40-V (D-S) MOSFET

Product Overview

The MSH40N095D is a Dual N-Channel MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize on-resistance (RDS(ON)), provide superior switching performance, and offer high energy pulse withstand capability in avalanche and commutation modes. It is well-suited for high efficiency, fast switching applications, including notebooks, load switches, and hand-held devices.

Product Attributes

  • Brand: Bruckewell Technology Corporation
  • Technology: Trench DMOS
  • RoHS Compliant: Yes
  • Green Device Available: Yes

Technical Specifications

Parameter Value Unit Conditions
General Specifications
Model MSH40N095D Dual N-Channel 40-V (D-S) MOSFET
Drain-Source Voltage (VDS) 40 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) @ TC=25°C 21 A @ TC=25°C
Continuous Drain Current (ID) @ TC=70°C 12 A @ TC=70°C
Pulsed Drain Current (IDM) 60 A 2
Single Pulse Avalanche Current (IAS) 20 A L =0.1mH3
Single Pulse Avalanche Energy (EAS) 20 mJ L =0.1mH3
Power Dissipation (PD) 8 W (TC=25°C)
Operating Junction and Storage Temperature (Tj, Tstg) -55 to +150 °C
Maximum Junction-to-Ambient Thermal Resistance (RθJA) 65 °C/W 1
Maximum Junction-to-Case Thermal Resistance (RθJC) 5 °C/W
Electrical Characteristics
Gate Threshold Voltage (VGS(th)) 1.2 - 2.2 V VDS =VGS, ID =250μA
Drain-Source Breakdown Voltage (BVDSS) 40 V VGS =0V, ID =250μA
Gate-Source Leakage Current (IGSS) ±100 nA VDS =0V, VGS =±20V
Drain-Source Leakage Current (IDSS) @ TJ=25°C 1 μA VDS =30V, VGS =0V
Drain-Source Leakage Current (IDSS) @ TJ=55°C 5 μA VDS =30V, VGS =0V
Static Drain-Source On-Resistance (RDS(on)) @ VGS=10V 7.8 - 9.5 VGS =10V, ID =20A2
Static Drain-Source On-Resistance (RDS(on)) @ VGS=4.5V 12 - 17 VGS =4.5V, ID =15A2
Single Pulse Avalanche Energy (EAS)5 5 mJ VDD =25V, L =0.1mH, IAS =20A
Diode Forward Voltage (VSD) 1 V IS =1A, VGS =0V, TJ =25°C2
Continuous Source Current (IS) 20 A VG =VD =0V, Force Current1,6
Pulsed Source Current (ISM) 40 A 2,6
Dynamic Characteristics
Total Gate Charge (Qg) 5.8 nC VDS =20V, ID =12A, VGS =10V2
Gate-Source Charge (Qgs) 3 nC VDS =20V, ID =12A, VGS =10V2
Gate-Drain Charge (Qgd) 1.2 nC VDS =20V, ID =12A, VGS =10V2
Turn-On Delay Time (td(on)) 14.3 ns VDS =15V, ID =1A, VGS =10V, RG =3.3Ω2
Rise Time (tr) 5.6 ns VDS =15V, ID =1A, VGS =10V, RG =3.3Ω2
Turn-Off Delay Time (td(off)) 20 ns VDS =15V, ID =1A, VGS =10V, RG =3.3Ω2
Fall Time (tf) 11 ns VDS =15V, ID =1A, VGS =10V, RG =3.3Ω2
Input Capacitance (CISS) 690 pF VDS =15V, VGS =0V, f =1.0MHz
Output Capacitance (COSS) 193 pF VDS =15V, VGS =0V, f =1.0MHz
Reverse Transfer Capacitance (CRSS) 38 pF VDS =15V, VGS =0V, f =1.0MHz
Gate Resistance (Rg) 1.7 Ω VDS =0V, VGS =0V, f =1.0MHz
Package Dimensions (PDFN 5x6)
Dimension Min. Nom. Max.
A 0.90 1.10 1.10
b 0.33 0.41 0.51
C 0.20 0.25 0.30
D1 4.80 4.90 5.00
D2 3.61 3.81 3.96
E 5.90 6.00 6.10
E1 5.70 5.75 5.80
E2 3.38 3.58 3.78
H 0.41 0.51 0.61
K 1.10 - 6.20
L 0.51 0.61 0.71
L1 0.06 0.13 0.20
M 0.50 - -
e 1.27 BSC

Notes:
1 The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%.
3 The EAS data shows maximum rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=20A.
4 The power dissipation is limited by 150°C junction temperature.
5 The Min. value is 100% EAS tested guarantee.
6 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.


2412061551_Bruckewell-MSH40N095D_C42407736.pdf

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