Trench DMOS Dual N Channel 40 Volt MOSFET Bruckewell MSH40N095D for Switching in Electronic Devices
MSH40N095D Dual N-Channel 40-V (D-S) MOSFET
Product Overview
The MSH40N095D is a Dual N-Channel MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize on-resistance (RDS(ON)), provide superior switching performance, and offer high energy pulse withstand capability in avalanche and commutation modes. It is well-suited for high efficiency, fast switching applications, including notebooks, load switches, and hand-held devices.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Technology: Trench DMOS
- RoHS Compliant: Yes
- Green Device Available: Yes
Technical Specifications
| Parameter | Value | Unit | Conditions |
|---|---|---|---|
| General Specifications | |||
| Model | MSH40N095D | Dual N-Channel 40-V (D-S) MOSFET | |
| Drain-Source Voltage (VDS) | 40 | V | |
| Gate-Source Voltage (VGS) | ±20 | V | |
| Continuous Drain Current (ID) @ TC=25°C | 21 | A | @ TC=25°C |
| Continuous Drain Current (ID) @ TC=70°C | 12 | A | @ TC=70°C |
| Pulsed Drain Current (IDM) | 60 | A | 2 |
| Single Pulse Avalanche Current (IAS) | 20 | A | L =0.1mH3 |
| Single Pulse Avalanche Energy (EAS) | 20 | mJ | L =0.1mH3 |
| Power Dissipation (PD) | 8 | W | (TC=25°C) |
| Operating Junction and Storage Temperature (Tj, Tstg) | -55 to +150 | °C | |
| Maximum Junction-to-Ambient Thermal Resistance (RθJA) | 65 | °C/W | 1 |
| Maximum Junction-to-Case Thermal Resistance (RθJC) | 5 | °C/W | |
| Electrical Characteristics | |||
| Gate Threshold Voltage (VGS(th)) | 1.2 - 2.2 | V | VDS =VGS, ID =250μA |
| Drain-Source Breakdown Voltage (BVDSS) | 40 | V | VGS =0V, ID =250μA |
| Gate-Source Leakage Current (IGSS) | ±100 | nA | VDS =0V, VGS =±20V |
| Drain-Source Leakage Current (IDSS) @ TJ=25°C | 1 | μA | VDS =30V, VGS =0V |
| Drain-Source Leakage Current (IDSS) @ TJ=55°C | 5 | μA | VDS =30V, VGS =0V |
| Static Drain-Source On-Resistance (RDS(on)) @ VGS=10V | 7.8 - 9.5 | mΩ | VGS =10V, ID =20A2 |
| Static Drain-Source On-Resistance (RDS(on)) @ VGS=4.5V | 12 - 17 | mΩ | VGS =4.5V, ID =15A2 |
| Single Pulse Avalanche Energy (EAS)5 | 5 | mJ | VDD =25V, L =0.1mH, IAS =20A |
| Diode Forward Voltage (VSD) | 1 | V | IS =1A, VGS =0V, TJ =25°C2 |
| Continuous Source Current (IS) | 20 | A | VG =VD =0V, Force Current1,6 |
| Pulsed Source Current (ISM) | 40 | A | 2,6 |
| Dynamic Characteristics | |||
| Total Gate Charge (Qg) | 5.8 | nC | VDS =20V, ID =12A, VGS =10V2 |
| Gate-Source Charge (Qgs) | 3 | nC | VDS =20V, ID =12A, VGS =10V2 |
| Gate-Drain Charge (Qgd) | 1.2 | nC | VDS =20V, ID =12A, VGS =10V2 |
| Turn-On Delay Time (td(on)) | 14.3 | ns | VDS =15V, ID =1A, VGS =10V, RG =3.3Ω2 |
| Rise Time (tr) | 5.6 | ns | VDS =15V, ID =1A, VGS =10V, RG =3.3Ω2 |
| Turn-Off Delay Time (td(off)) | 20 | ns | VDS =15V, ID =1A, VGS =10V, RG =3.3Ω2 |
| Fall Time (tf) | 11 | ns | VDS =15V, ID =1A, VGS =10V, RG =3.3Ω2 |
| Input Capacitance (CISS) | 690 | pF | VDS =15V, VGS =0V, f =1.0MHz |
| Output Capacitance (COSS) | 193 | pF | VDS =15V, VGS =0V, f =1.0MHz |
| Reverse Transfer Capacitance (CRSS) | 38 | pF | VDS =15V, VGS =0V, f =1.0MHz |
| Gate Resistance (Rg) | 1.7 | Ω | VDS =0V, VGS =0V, f =1.0MHz |
| Package Dimensions (PDFN 5x6) | |||
| Dimension | Min. | Nom. | Max. |
| A | 0.90 | 1.10 | 1.10 |
| b | 0.33 | 0.41 | 0.51 |
| C | 0.20 | 0.25 | 0.30 |
| D1 | 4.80 | 4.90 | 5.00 |
| D2 | 3.61 | 3.81 | 3.96 |
| E | 5.90 | 6.00 | 6.10 |
| E1 | 5.70 | 5.75 | 5.80 |
| E2 | 3.38 | 3.58 | 3.78 |
| H | 0.41 | 0.51 | 0.61 |
| K | 1.10 | - | 6.20 |
| L | 0.51 | 0.61 | 0.71 |
| L1 | 0.06 | 0.13 | 0.20 |
| M | 0.50 | - | - |
| e | 1.27 BSC | ||
Notes:
1 The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%.
3 The EAS data shows maximum rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=20A.
4 The power dissipation is limited by 150°C junction temperature.
5 The Min. value is 100% EAS tested guarantee.
6 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2412061551_Bruckewell-MSH40N095D_C42407736.pdf
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