30 Volt N Channel MOSFET Bruckewell MSH30N039 Featuring Trench DMOS Technology and RoHS Compliance
Key Attributes
Model Number:
MSH30N039
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
70pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
25W
Input Capacitance(Ciss):
-
Gate Charge(Qg):
14.7nC@4.5V
Mfr. Part #:
MSH30N039
Package:
PDFN5x6-8
Product Description
Product Overview
The MSH30N039 is an N-Channel 30-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), enhance switching performance, and provide robust high-energy pulse handling in avalanche and commutation modes. It is ideally suited for high-efficiency, fast-switching applications. The device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Technology: Trench DMOS
- Certifications: RoHS Compliant, Green Device Available
- Package Type: PDFN 5X6
- Packing: 3,000/Reel
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current (TC =25°C) | 60 | A | |||
| ID | Continuous Drain Current (TC =100°C) | 38 | A | |||
| IDM | Pulsed Drain Current | 120 | A | |||
| IAS | Single Pulse Avalanche Current (L =0.1mH) | 40 | A | |||
| EAS | Single Pulse Avalanche Energy (L =0.1mH) | 80 | mJ | |||
| PD | Power Dissipation (TC =25°C) | 25 | W | |||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | 150 | °C | ||
| Thermal Resistance Ratings | ||||||
| RθJA | Maximum Junction-to-Ambient | (Note 1) | 65 | °C/W | ||
| RθJC | Maximum Junction-to-Case | (Note 1) | 5.0 | °C/W | ||
| Electrical Characteristics (TJ=25°C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =250μA | 1.2 | 2.2 | V | |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =250μA | 30 | V | ||
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =±20V | ±100 | nA | ||
| IDSS | Drain-Source Leakage Current | VDS =30V, VGS =0V, TJ =25°C | 1 | μA | ||
| IDSS | Drain-Source Leakage Current | VDS =30V, VGS =0V, TJ =55°C | 5 | μA | ||
| RDS (on) | Static Drain-Source On-Resistance | VGS =10V, ID =20A | 3.2 | 3.9 | mΩ | |
| RDS (on) | Static Drain-Source On-Resistance | VGS =4.5V, ID =15A | 4.9 | 6.1 | mΩ | |
| EAS | Single Pulse Avalanche Energy | VDD =25V, L =0.1mH, IAS =20A (Note 5) | 20 | mJ | ||
| VSD | Diode Forward Voltage | IS =1A, VGS =0V, TJ =25°C (Note 2) | 1.0 | V | ||
| IS | Continuous Source Current | (Note 1, 6) | 30 | A | ||
| ISM | Pulsed Source Current | (Note 2, 6) | 60 | A | ||
| Dynamic Characteristics | ||||||
| Qg | Total Gate Charge | VDS =15V ID =20A VGS =4.5V (Note 2) | 14.7 | nC | ||
| Qgs | Gate-Source Charge | 5.8 | nC | |||
| Qgd | Gate-Drain Charge | 3.5 | nC | |||
| td(on) | Turn-On Delay Time | VDS =15V ID =20A VGS =10V RG =3Ω (Note 2) | 7.5 | ns | ||
| tr | Rise Time | 20.2 | ns | |||
| td(off) | Turn-Off Delay Time | 21.6 | ns | |||
| tf | Fall Time | 4.4 | ns | |||
| CISS | Input Capacitance | VDS =15V VGS =0V f =1.0MHz | 1476 | pF | ||
| COSS | Output Capacitance | 556 | pF | |||
| CRSS | Reverse Transfer Capacitance | 70 | pF | |||
| Rg | Gate Resistance | VDS =0V, VGS =0V, f =1.0MHz | 1.65 | Ω | ||
Notes:
- 1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
- 2. The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%.
- 3. The EAS data shows maximum rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=55A.
- 4. The power dissipation is limited by 150 junction temperature.
- 5. The Min. value is 100% EAS tested guarantee.
- 6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2412061551_Bruckewell-MSH30N039_C42407732.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
