High Power MOSFET BLUE ROCKET BRCS035N08SHRA with 80V Drain Source Voltage and Ultra Low On Resistance

Name: High Power MOSFET BLUE ROCKET BRCS035N08SHRA with 80V Drain Source Voltage and Ultra Low On Resistance
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BRCS035N08SHRA
Availability: InStock

Key Attributes

Model Number: BRCS035N08SHRA

Product Custom Attributes

Drain To Source Voltage:

80V

Current - Continuous Drain(Id):

195A

Operating Temperature -:

-55℃~+150℃

RDS(on):

3.5mΩ@10V

Gate Threshold Voltage (Vgs(th)):

4V@250uA

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

305pF

Number:

1 N-channel

Output Capacitance(Coss):

2.44nF

Input Capacitance(Ciss):

6.35nF

Pd - Power Dissipation:

227W

Gate Charge(Qg):

128nC@10V

Mfr. Part #:

BRCS035N08SHRA

Package:

TO-220

Product Description

Product Overview

The BRCS035N08SHRA is an N-channel MOSFET housed in a TO-220 plastic package. It features ultra-low on-resistance and fast switching speeds, making it suitable for applications such as BMS appliances, high-power inverter systems, and general power appliances. This device offers high performance with a drain-source voltage of 80V and a continuous drain current of 195A at 25.

Product Attributes

Brand: FS (implied by datasheet URL)
Package Type: TO-220 Plastic Package
Channel Type: N-Channel MOSFET
Marking Code: BR **** 035N08SH (BR: Company Code, 035N08SH: Product Type, ****: Lot No. Code)

Technical Specifications

Parameter	Symbol	Rating	Unit
Drain-Source Voltage	VDS	80	V
Drain Current (Tc=25)	ID(Tc=25)	195	A
Pulsed Drain Current	IDM	400	A
Gate-Source Voltage	VGS	20	V
Single Pulsed Avalanche Energy (L=0.5mH)	EAS	1200	mJ
Avalanche Current	IAS	47.5	A
Total Power Dissipation (Tc=25)	PD(Tc=25)	227	W
Junction and Storage Temperature Range	TJ,TSTG	-55 to 150
Thermal Resistance-Junction to Ambient (t 10s)	RJA	15	/W
Thermal Resistance-Junction to Ambient (Steady-State)	RJA	60	/W
Thermal Resistance-Junction to Case (Steady-State)	RJC	0.55	/W

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=250A	80	94		V
Zero Gate Voltage Drain Current	IDSS	VDS=80V, VGS=0V			1	A
Gate-Body Leakage Current	IGSS	VGS=20V, VDS=0V			100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS, ID=250A	2	2.9	4	V
Static Drain-Source On-Resistance	RDS(on)	VGS=10V, ID=30A		2.9	3.5	m
Forward On Voltage	VSD	VGS=0V, IS=1A			1.2	V
Input Capacitance	Ciss	VDS=25V, VGS=0V, f=1MHz		6350		pF
Output Capacitance	Coss	VDS=25V, VGS=0V, f=1MHz		2440		pF
Reverse Transfer Capacitance	Crss	VDS=25V, VGS=0V, f=1MHz		305		pF
Gate Resistance	Rg	f=1MHz		1.6
Total Gate Charge	Qg	VGS=10V, VDS=40V, ID=20A		128		nC
Gate Source Charge	Qgs	VGS=10V, VDS=40V, ID=20A		36		nC
Gate Drain Charge	Qgd	VGS=10V, VDS=40V, ID=20A		23		nC
Turn-On Delay Time	td(on)	VGS=10V, VDS=40V, RL=2, RGEN=3		25		ns
Turn-On Rise Time	tr	VGS=10V, VDS=40V, RL=2, RGEN=3		19		ns
Turn-Off Delay Time	td(off)	VGS=10V, VDS=40V, RL=2, RGEN=3		56		ns
Turn-Off Fall Time	tf	VGS=10V, VDS=40V, RL=2, RGEN=3		18		ns

Packaging Specifications

BULK Package

Package Type	Units/Bag	Bags/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Dimension (unit: mm)
TO-220/F	200	10	2,000	5	10,000	560245195

TUBE Package

Package Type	Units/Tube	Tubes/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Dimension (unit: mm)
TO-220/F	50	20	1,000	5	5,000	575290180

Soldering Profile

Temperature Profile for Dip Soldering (Pb-Free)

Preheating: 25~150, Time: 60~90 sec.
Peak Temp.: 2555, Duration: 50.5 sec.
Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions

Temp.: 2705
Time: 101 sec.

2410121231_BLUE-ROCKET-BRCS035N08SHRA_C22449014.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.