Industrial grade P channel MOSFET BLUE ROCKET BRCS900P10DP with TO 252 plastic package and low on resistance ratings
Key Attributes
Model Number:
BRCS900P10DP
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-
RDS(on):
100mΩ@4.5V,10A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
450pF
Number:
1 P-Channel
Input Capacitance(Ciss):
5.2nF
Output Capacitance(Coss):
750pF
Pd - Power Dissipation:
65W
Gate Charge(Qg):
5.9nC@10V;2.7nC@4.5V
Mfr. Part #:
BRCS900P10DP
Package:
TO-252
Product Description
Product Overview
The BRCS900P10DP is a P-channel MOSFET in a TO-252 plastic package, designed for power management in industrial DC/DC converters. It offers a drain-source voltage of -100V and a continuous drain current of -18A. Key features include low on-resistance ratings of less than 90m at -10V and less than 100m at -4.5V. This product is halogen-free.
Product Attributes
- Brand: Fsb (implied by URL)
- Package Type: TO-252 Plastic Package
- Product Type: P-Channel MOSFET
- Material: Halogen-Free Product
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | ||||||
| Drain-Source Voltage | VDS | -100 | V | |||
| Drain Current - Continuous | ID(Tc=25) | -18 | A | |||
| Drain Current Pulsed | IDM | -54 | A | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Power Dissipation | PD(Tc=25) | 65 | W | |||
| Single Pulse Avalanche Energy | EAS | (L=0.5mH) | 185 | mJ | ||
| Avalanche Current | IAS | (L=0.5mH) | -21.5 | A | ||
| Junction and Storage Temperature Range | Tj, Tstg | -55 | 150 | |||
| Thermal resistance, junction - ambient Steady-State | RJA | 63 | / W | |||
| Thermal resistance, junction - case Steady-State | RJC | 1.92 | / W | |||
| Electrical Characteristics (Ta=25) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID=-250A, VGS=0V | -100 | -110 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=-100V, VGS=0V | -1 | uA | ||
| Gate-Body leakage current | IGSS | VDS=0V, VGS= 20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -1 | -1.7 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-10A | 80 | 90 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-10A | 90 | 100 | m | |
| Diode Forward Voltage | VSD | IS=-1A, VGS=0V | -1.2 | V | ||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1.0MHz | 5200 | pF | ||
| Output Capacitance | Coss | VDS=-15V, VGS=0V, f=1.0MHz | 750 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-15V, VGS=0V, f=1.0MHz | 450 | pF | ||
| Gate resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 4.2 | |||
| Total Gate Charge | Qg(10V) | VGS=-10V, VDS=-50V, ID=-5A | 5.9 | nC | ||
| Total Gate Charge | Qg(4.5V) | VGS=-4.5V, VDS=-50V, ID=-5A | 2.7 | nC | ||
| Gate Source Charge | Qgs | VGS=-10V, VDS=-50V, ID=-5A | 1.2 | nC | ||
| Gate Drain Charge | Qgd | VGS=-10V, VDS=-50V, ID=-5A | 1.2 | nC | ||
| Electrical Characteristics (Ta=25) | ||||||
| Turn-On Delay Time | td(on) | VGS=-10V, VDS=-50V, RL=10, RGEN=3 | 6 | ns | ||
| Turn-On Rise Time | tr | VGS=-10V, VDS=-50V, RL=10, RGEN=3 | 2.4 | ns | ||
| Turn-Off Delay Time | td(off) | VGS=-10V, VDS=-50V, RL=10, RGEN=3 | 19 | ns | ||
| Turn-Off Fall Time | tf | VGS=-10V, VDS=-50V, RL=10, RGEN=3 | 2.6 | ns | ||
2410121228_BLUE-ROCKET-BRCS900P10DP_C19190009.pdf
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