medium power PNP transistor CBI MMBT5401T featuring 200 mW collector power dissipation surface mount
Key Attributes
Model Number:
MMBT5401T
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-
Mfr. Part #:
MMBT5401T
Package:
SOT-523
Product Description
Product Overview
This PNP transistor, complementary to the MMBT5551W, is designed for medium power amplification and switching applications. It features a small surface mount package, making it suitable for various electronic designs requiring compact components. The transistor offers reliable performance with a maximum collector current of 600 mA and a collector power dissipation of 200 mW.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: Plastic Surface Mounted Package
- Transistor Type: PNP
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||||
| VCBO | Collector-Base Voltage | -160 | V | |||
| VCEO | Collector-Emitter Voltage | -150 | V | |||
| VEBO | Emitter-Base Voltage | -5 | V | |||
| IC | Collector Current | -600 | mA | |||
| PC | Collector Power Dissipation | 200 | mW | |||
| RJA | Thermal Resistance From Junction To Ambient | 625 | /W | |||
| Tj | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | +150 | |||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||||
| V(BR)CBO | Collector-base breakdown voltage | IC=-100A, IE=0 | -160 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC=-1mA, IB=0 | -150 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=-10A, IC=0 | -5 | V | ||
| ICBO | Collector cut-off current | VCB=-120V, IE=0 | -50 | nA | ||
| IEBO | Emitter cut-off current | VEB=-3V, IC=0 | -50 | nA | ||
| hFE | DC current gain | VCE=-5V, IC=-1mA | 50 | |||
| VCE=-5V, IC=-10mA | 60 | 300 | ||||
| VCE=-5V, IC=-50mA | 50 | |||||
| VCE(sat) | Collector-emitter saturation voltage | IC=-50mA, IB=-5mA | -0.5 | V | ||
| IC=-10mA, IB=-1mA | -0.2 | V | ||||
| VBE(sat) | Base-emitter saturation voltage | IC=-50mA, IB=-5mA | -1 | V | ||
| IC=-10mA, IB=-1mA | -1 | V | ||||
| fT | Transition frequency | VCE=-10V, IC=-10mA, f=100MHz | 100 | MHz | ||
| Cob | Collector output capacitance | VCB=-10V, IE=0, f=1MHz | 6 | pF | ||
Package Dimensions (SOT-523)
| Symbol | Dimension in Millimeters | Min | Max |
|---|---|---|---|
| A | 0.60 | 0.80 | |
| A1 | 0.010 | 0.100 | |
| B | 0.95 | 1.05 | |
| bp | 0.26 | 0.40 | |
| bq | 0.16 | 0.30 | |
| C | 0.09 | 0.15 | |
| D | 1.50 | 1.70 | |
| E | 0.70 | 0.85 | |
| HE | 1.45 | 1.75 | |
| Lp | 0.16 | 0.36 | |
| 0 | 5 |
2410121805_CBI-MMBT5401T_C2836079.pdf
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