High current 65A N channel MOSFET BLUE ROCKET BRCS080N02DP in TO 252 package for DC DC applications
Key Attributes
Model Number:
BRCS080N02DP
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
65A
RDS(on):
5mΩ@4.5V;6.2mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
600mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
160pF
Output Capacitance(Coss):
170pF
Pd - Power Dissipation:
52W
Input Capacitance(Ciss):
2nF
Mfr. Part #:
BRCS080N02DP
Package:
TO-252
Product Description
Product Overview
The BRCS080N02DP is an N-channel MOSFET in a TO-252 plastic package, designed for high efficiency switching DC/DC converters and switch mode power supplies. It features a Drain-Source Voltage (VDS) of 20V and a continuous Drain Current (ID) of 65A at VGS = 12V. This HF product offers low on-resistance, with typical values of 8m at 4.5V and 10m at 2.5V.
Product Attributes
- Brand: fsbrec
- Product Type Code: 080N02
- Package Type: TO-252
- Material: Plastic
- Halogen Free: Yes
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | ||||||
| Drain-Source Voltage | VDSS | 20 | V | |||
| Drain Current (Tc=25) | ID(Tc=25) | 65 | A | |||
| Peak Drain Current | IDM | 157 | A | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Avalanche Current | IAS | 19 | A | |||
| Single Pulsed Avalanche Energy | EAS | 361 | mJ | |||
| Total Power Dissipation (Tc=25) | PD(Tc=25) | 52 | W | |||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | |||
| Thermal resistance, junction - ambient (t 10s) | RJA | Steady-State | 20 | /W | ||
| Thermal resistance, junction - case (Steady-State) | RJC | Steady-State | 1.55 | /W | ||
| Electrical Characteristics (Ta=25) | ||||||
| Breakdown Voltage (Zero Gate Voltage Drain Current) | BVDSS | VGS=0V, ID=250A | 20 | 24 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1 | A | ||
| Gate-Body Leakage Current (Forward) | IGSS | VGS=12V, VDS=0V | 0.1 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 0.5 | 0.6 | 1.1 | V |
| Forward On Voltage | VSD | IS=1A, VGS=0V | 1.2 | V | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=10A | 5 | 8 | m | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=2.5V, ID=10A | 6.2 | 10 | m | |
| Gate Resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 2 | |||
| Input Capacitance | Ciss | VGS=0V, f=1.0MHz, VDS=15V | 2000 | pF | ||
| Output Capacitance | Coss | VGS=0V, f=1.0MHz, VDS=15V | 170 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, f=1.0MHz, VDS=15V | 160 | pF | ||
| Electrical Characteristics (Ta=25) | ||||||
| Total Gate Charge | Qg | VGS=4.5V, VDS=10V, ID=18A | 14.7 | nC | ||
| Gate Source Charge | Qgs | VGS=4.5V, VDS=10V, ID=18A | 1.9 | nC | ||
| Gate Drain Charge | Qg d | VGS=4.5V, VDS=10V, ID=18A | 4.7 | nC | ||
| Turn-On Delay Time | td(on) | VGS=4.5V, VDS=10V, RL=0.75, RGEN=3 | 13 | ns | ||
| Turn-On Rise Time | tr | VGS=4.5V, VDS=10V, RL=0.75, RGEN=3 | 23 | ns | ||
| Turn-Off Delay Time | td(off) | VGS=4.5V, VDS=10V, RL=0.75, RGEN=3 | 60 | ns | ||
| Turn-Off Fall Time | tf | VGS=4.5V, VDS=10V, RL=0.75, RGEN=3 | 35 | ns | ||
2504101957_BLUE-ROCKET-BRCS080N02DP_C46962503.pdf
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