252 packaged BLUE ROCKET BRCS080N10SDP N channel MOSFET with 75W power dissipation and 20V gate source voltage

Name: 252 packaged BLUE ROCKET BRCS080N10SDP N channel MOSFET with 75W power dissipation and 20V gate source voltage
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BRCS080N10SDP
Availability: InStock

Key Attributes

Model Number: BRCS080N10SDP

Product Custom Attributes

Drain To Source Voltage:

100V

Current - Continuous Drain(Id):

68A

RDS(on):

6.2mΩ@10V;8.2mΩ@4.5V

Gate Threshold Voltage (Vgs(th)):

1.8V@250uA

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

100pF

Output Capacitance(Coss):

900pF

Pd - Power Dissipation:

75W

Input Capacitance(Ciss):

2.41nF

Gate Charge(Qg):

37nC@10V

Mfr. Part #:

BRCS080N10SDP

Package:

TO-252

Product Description

Product Overview

The BRCS080N10SDP is an N-channel MOSFET in a TO-252 plastic package, designed for high-frequency switching and synchronous rectification applications. It offers a Drain-Source Voltage (VDS) of 100V and a continuous Drain Current (ID) of 68A. Key features include low on-resistance at both 10V (8m Typ. 6.2m) and 4.5V (12m Typ. 8.2m), and it is a Halogen-Free (HF) product.

Product Attributes

Brand: FSBREC
Product Code: BRCS080N10SDP
Package Type: TO-252
Channel Type: N-Channel
Certifications: HF Product (Halogen-Free)
Marking: BR, 080N10S, Lot No. Code

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage	VDS				100	V
Drain Current - Continuous	ID				68	A
Drain Current Pulsed	IDM				156	A
Gate-Source Voltage	VGS				20	V
Power Dissipation	PD(Tc=25)				75	W
Single Pulse Avalanche Energy(L=0.5mH)	EAS				264.5	mJ
Avalanche Current(L=0.5mH)	IAS				23	A
Junction and Storage Temperature Range	Tj, Tstg		-55		150
Thermal resistance, junction - ambient (t 10s)	RJA			20		/ W
Thermal resistance, junction - case (Steady-State)	RJC			1.7		/ W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=250A	100	109		V
Zero Gate Voltage Drain Current	IDSS	VDS=100V, VGS=0V			1.0	A
Gate-Body Leakage Current	IGSS	VDS=0V, VGS=20V			100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS, ID=250A	1	1.8	2.5	V
Static Drain-Source On-Resistance	RDS(on)	VGS=10V, ID=20A		6.2	8	m
Static Drain-Source On-Resistance	RDS(on)	VGS=4.5V, ID=10A		8.2	12	m
Drain-Source Diode Forward Voltage	VSD	VGS=0V, IS=1A			1.2	V
Gate resistance	Rg	VGS=0V, VDS=0V, f=1MHz		1.3
Input Capacitance	Ciss	VDS=25V, VGS=0V, f=1.0MHz		2410		pF
Output Capacitance	Coss	VDS=25V, VGS=0V, f=1.0MHz		900		pF
Reverse Transfer Capacitance	Crss	VDS=25V, VGS=0V, f=1.0MHz		100		pF
Total Gate Charge	Qg(10V)	VGS=10V, VDS=50V, ID=20A		37		nC
Total Gate Charge	Qg(4.5V)	VGS=4.5V, VDS=50V, ID=10A		17.2		nC
Gate Source Charge	Qgs	VGS=10V, VDS=50V, ID=20A		8.5		nC
Gate Drain Charge	Qgd	VGS=10V, VDS=50V, ID=20A		5.3		nC
Electrical Characteristics (Ta=25)
Turn-On Delay Time	td(on)	VGS=10V, VDS=50V, RL=2.5, RGEN=3		11		ns
Turn-On Rise Time	tr	VGS=10V, VDS=50V, RL=2.5, RGEN=3		4		ns
Turn-Off Delay Time	td(off)	VGS=10V, VDS=50V, RL=2.5, RGEN=3		32		ns
Turn-Off Fall Time	tf	VGS=10V, VDS=50V, RL=2.5, RGEN=3		6.3		ns

Package Dimensions: See page 7 of the datasheet.

Soldering Profile:

Preheating: 150~180, Time: 60~90 sec.
Peak Temp.: 2455, Duration: 50.5 sec.
Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions: Temperature: 2605, Time: 101 sec.

Packaging Specifications:

TO-252 (Reel): 2,500 Units/Reel
TO-251/252 (Tube): 75 Units/Tube

2506191802_BLUE-ROCKET-BRCS080N10SDP_C46962494.pdf

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