General purpose electronic transistor CBI SS8050 NPN bipolar junction for amplification and switching circuits
Key Attributes
Model Number:
SS8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
SS8050
Package:
SOT-23
Product Description
Product Overview
The SS8050 is an NPN bipolar junction transistor designed for general-purpose applications. It is complementary to the SS8550 transistor. This device is suitable for various electronic circuits requiring amplification or switching functionalities.
Product Attributes
- Marking: Y1
- Package: SOT-23 (Plastic surface mounted package; 3 leads)
Technical Specifications
| Parameter | Symbol | Test Conditions | MIN | TYP | MAX | Units |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (TA=25 unless otherwise noted) | ||||||
| Collector-Base Voltage | VCBO | 40 | V | |||
| Collector-Emitter Voltage | VCEO | 25 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current -Continuous | IC | 1.5 | A | |||
| Collector Power Dissipation | PC | 0.3 | W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC= 100A, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= 0.1mA, IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=40V, IE=0 | 0.1 | A | ||
| Collector cut-off current | ICEO | VCB=20V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB= 5V, IC=0 | 0.1 | A | ||
| DC current gain | hFE(1) | VCE=1V, IC= 100mA | 200 | 350 | ||
| hFE(2) | VCE=1V, IC= 800mA | 40 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC=800mA, IB= 80mA | 0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=800mA, IB= 80mA | 1.2 | V | ||
| Transition frequency | fT | VCE=10V, IC= 50mA, f=30MHz | 100 | MHz | ||
2409271603_CBI-SS8050_C2828471.pdf
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