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quality SOT23 Package NPN Silicon Epitaxial Transistor CBI BC850C Designed for Switching and Amplifier Tasks factory
quality SOT23 Package NPN Silicon Epitaxial Transistor CBI BC850C Designed for Switching and Amplifier Tasks factory

SOT23 Package NPN Silicon Epitaxial Transistor CBI BC850C Designed for Switching and Amplifier Tasks

Key Attributes
Model Number: BC850C
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Mfr. Part #:
BC850C
Package:
SOT-23
Product Description

Product Overview

The BC846-BC850 series are NPN Silicon Epitaxial Transistors designed for switching and amplifier applications. For complementary PNP types, the BC856-BC860 is recommended. These transistors are housed in a SOT-23 Plastic Package.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Type: NPN Silicon Epitaxial Transistor
  • Package: SOT-23 Plastic Package

Technical Specifications

Parameter Symbol BC846 BC847, BC850 BC848, BC849 Units
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage VCBO 80 50 30 V
Collector Emitter Voltage VCEO 65 45 30 V
Emitter Base Voltage VEBO 6 6 5 V
Collector Current IC 100 mA
Peak Collector Current ICM 200 mA
Power Dissipation Ptot 200 mW
Junction Temperature TJ 150 C
Storage Temperature Range TS - 65 to + 150 C
Characteristics (Tamb = 25 C)
DC Current Gain at VCE = 5 V, IC =2 mA hFE 110 - 220 200 - 450 420 - 800 -
Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA VCEsat - 250 mV
Collector Emitter Saturation Voltage at IC = 100 mA, IB = 5 mA VCEsat - 600 mV
Base Emitter On Voltage at IC = 2 mA, VCE = 5 V VBE(on) 580 - 700 mV
Base Emitter On Voltage at IC = 10 mA, VCE = 5V VBE(on) - 720 mV
Collector Cutoff Current at VCB = 30 V ICBO - 15 nA
Current Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz fT 300 MHz
Output Capacitance at VCB = 10 V, f = 1 MHz Cob - 6 pF
Input Capacitance at VEB = 0.5 V, f = 1 MHz Cib 9 pF
Noise Figure at IC = 200 A, VCE = 5 V, RG = 2 K, f =1 KHz NF 10 dB (BC846, BC847, BC848) 4 dB (BC846, BC847, BC848) 4 dB (BC846, BC847, BC848) -
Noise Figure at IC = 200 A, VCE = 5 V, RG = 2 K, f = 30 ~15 KHz NF - - 3 dB (BC849, BC850) -
Symbol Dimension in Millimeters Min Max
A 0.90 1.10
A1 0.013 0.100
B 1.80 2.00
bp 0.35 0.50
C 0.09 0.150
D 2.80 3.00
E 1.20 1.40
HE 2.20 2.80
Lp 0.20 0.50
0 5

2410121447_CBI-BC850C_C21714249.pdf

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