Surface Mount N Channel MOSFET BORN 2N7002DW with Low On Resistance and Voltage Controlled Switching
Key Attributes
Model Number:
2N7002DW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
RDS(on):
2.2Ω@10V;3.3Ω@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Pd - Power Dissipation:
350mW
Output Capacitance(Coss):
11pF
Input Capacitance(Ciss):
28pF
Mfr. Part #:
2N7002DW
Package:
SOT-363
Product Description
Product Overview
The BORN SEMICONDUCTOR 2N7002DW is an N-Channel MOSFET designed for high-density cell applications, offering low RDS(ON) and excellent voltage-controlled small signal switching capabilities. It features high saturation current capability and ESD protection for 2KV (HBM). This device is suitable for surface mount applications and comes in a SOT-363 package.
Product Attributes
- Brand: BORN SEMICONDUCTOR, INC.
- Product Type: N-Channel MOSFET
- Package: SOT-363
- ESD Protection: 2KV (HBM)
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| ID | Drain Current | 0.3 | A | |||
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=0.3A | 2.2 | |||
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V, ID=0.2A | 3.3 | |||
| Absolute Maximum Ratings (@TA=25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current | 0.3 | A | |||
| PD | Maximum Power Dissipation | 350 | mW | |||
| TJ | Operating Junction Temperature Range | -55 | +150 | C | ||
| Tstg | Storage Temperature Range | -55 | +150 | C | ||
| RJA | Thermal Resistance From Junction To Ambient | 357 | C/W | |||
| Electrical Characteristics (@TA=25C unless otherwise noted) | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250uA | 60 | V | ||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250uA | 1 | 2.5 | V | |
| IDSS | Drain-to-Source Leakage Current | VDS = 60V, VGS = 0V | 1.0 | uA | ||
| IGSS | Gate Body Leakage Current | VGS = 20V, VDS = 0V | 10 | uA | ||
| IGSS | Gate Body Leakage Current | VGS = 10V, VDS = 0V | 200 | nA | ||
| VSD | Diode Forward Voltage | IS = 0.25A, VGS = 0V | 1.0 | V | ||
| RDS(on) | Drain-Source On-State Resistance | VGS = 10V, ID = 0.3A | 2.2 | |||
| RDS(on) | Drain-Source On-State Resistance | VGS = 4.5V, ID = 0.2A | 3.3 | |||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1MHz | 28 | pF | ||
| Coss | Output Capacitance | 11 | pF | |||
| Crss | Reverse Transfer Capacitance | 4 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | VDD = 10V, ID = 0.2A, RGEN = 10, VGS = 10V | 2 | nS | ||
| tr | Rise time | 15 | nS | |||
| td(off) | Turn-off Delay Time | 7 | nS | |||
| tf | Turn-off Fall Time | 20 | nS | |||
| Outline Drawing - SOT-363 | ||||||
| SYMBOL | MIN. | TYP. | MAX. | UNIT | ||
| A | 0.90 | 1.00 | 1.10 | MM | ||
| A1 | 0.00 | 0.50 | 0.100 | MM | ||
| A2 | 0.90 | 0.95 | 1.00 | MM | ||
| b | 0.15 | 0.25 | 0.35 | MM | ||
| C | 0.08 | 0.12 | 0.15 | MM | ||
| D | 2.00 | 2.10 | 2.20 | MM | ||
| E | 2.15 | 2.30 | 2.45 | MM | ||
| E1 | 1.15 | 1.25 | 1.35 | MM | ||
| e | 0.65(TYP) | MM | ||||
| e1 | 1.20 | 1.30 | 1.40 | MM | ||
| L | 0.26 | 0.36 | 0.46 | MM | ||
| L1 | 0.525(REF) | MM | ||||
| 0 | 4 | 8 | ||||
| Packaging Tape - SOT-363 | ||||||
| SYMBOL | MILLIMETER | |||||
| A0 | 2.250.1 | |||||
| B0 | 2.550.1 | |||||
| E | 1.750.1 | |||||
| F | 3.500.1 | |||||
| K0 | 1.200.1 | |||||
| P | 4.000.1 | |||||
| P0 | 4.000.1 | |||||
| P1 | 2.000.1 | |||||
| W | 8.000.2 | |||||
| Packaging Reel | ||||||
| SYMBOL | MILLIMETER | |||||
| A | 177.80.2 | |||||
| B | 2.70.2 | |||||
| C | 13.50.2 | |||||
| D | 9.60.3 | |||||
| E | 54.50.2 | |||||
| F | 12.30.3 | |||||
| T1 | 1.00.2 | |||||
| Quantity | 3000PCS | |||||
2506201720_BORN-2N7002DW_C49009904.pdf
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