Low RDS On N Channel MOSFET BLUE ROCKET BRCS4N10TA with 100V Drain Source Voltage and SOT 89 Package
Key Attributes
Model Number:
BRCS4N10TA
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
150mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
28pF
Number:
1 N-channel
Output Capacitance(Coss):
155pF
Input Capacitance(Ciss):
190pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
3.8nC@10V
Mfr. Part #:
BRCS4N10TA
Package:
SOT-89
Product Description
Product Overview
The BRCS4N10TA is an N-Channel MOSFET in a SOT-89 plastic package. It features a Drain-Source Voltage (VDS) of 100V and a Continuous Drain Current (ID) of 4A. With a low On-Resistance (RDS(ON)) of less than 115m at VGS = 10V and less than 150m at VGS = 4.5V, this device is suitable for load switch or Pulse Width Modulation (PWM) applications. It is also a Halogen-Free (HF) product.
Product Attributes
- Brand: fsbrec (implied by datasheet URL)
- Package Type: SOT-89
- Channel Type: N-Channel
- Product Type Code: 4N1 (from marking instructions)
- Company Code: H (from marking instructions)
- Material: Plastic Package
- Environmental: Halogen-Free Product
Technical Specifications
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V |
| Continuous Drain Current | ID | 4 | A |
| Pulsed Drain Current | IDM | 16 | A |
| Gate-Source Voltage | VGS | 20 | V |
| Total Power Dissipation | PD | 2.0 | W |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 to 150 | |
| Maximum Junction-to-Ambient (t 10s) | RJA | 62.5 | /W |
| Maximum Junction-to-Ambient (Steady-State) | RJA | 87 | /W |
| Maximum Junction-to-Lead (Steady-State) | RJL | 55.5 | /W |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| DrainSource Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V, TJ=55 | 5 | A | ||
| GateBody Leakage | IGSS | VGS=20V, VDS=0V | 0.1 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1.2 | 1.6 | 2.5 | V |
| Static DrainSource OnResistance | RDS(on) | VGS=10V, ID=1A | 107 | 115 | m | |
| VGS=4.5V, ID=1A | 140 | 150 | m | |||
| DrainSource Diode Forward Voltage | VSD | VGS=0V, IS=1A | 1.2 | V |
| Parameter | Symbol | Test Conditions | Typ | Unit |
|---|---|---|---|---|
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 190 | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1MHz | 155 | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1MHz | 28 | pF |
| Gate resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 0.8 | |
| Total Gate Charge | Qg(10V) | VGS=10V, VDS=50V, ID=4A | 3.8 | nC |
| Total Gate Charge | Qg(4.5V) | VGS=4.5V, VDS=50V, ID=4A | 1.8 | nC |
| Gate Source Charge | Qgs | VGS=10V, VDS=50V, ID=4A | 0.8 | nC |
| Gate Drain Charge | Qgd | VGS=10V, VDS=50V, ID=4A | 0.8 | nC |
| TurnOn Delay Time | td(on) | VGS=10V, RL=25, VDS=50V, RGEN=3 | 5 | ns |
| TurnOn Rise Time | tr | VGS=10V, RL=25, VDS=50V, RGEN=3 | 3 | ns |
| TurnOff Delay Time | td(off) | VGS=10V, RL=25, VDS=50V, RGEN=3 | 19 | ns |
| TurnOff Fall Time | tf | VGS=10V, RL=25, VDS=50V, RGEN=3 | 3 | ns |
| Marking Code | Description |
|---|---|
| H4N1 ** | 4N1: Product Type Code, H: Company Code, **: Lot No. Code |
| Package Type | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Dimension (Reel) | Dimension (Inner Box) | Dimension (Outer Box) |
|---|---|---|---|---|---|---|---|---|
| SOT-89 | 1,000 | 7 | 7,000 | 6 | 42,000 | 712 | 180120180 | 390358205 |
| Test Condition | Temperature | Time |
|---|---|---|
| Resistance to Soldering Heat | 2605 | 101 sec |
| Stage | Temperature | Time |
|---|---|---|
| Preheating | 150180 | 6090 sec |
| Peak Temp. | 2455 | 50.5 sec |
| Cooling Speed | 210/sec |
2410121228_BLUE-ROCKET-BRCS4N10TA_C22449011.pdf
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