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quality Electronic Component CBI MPSA42U NPN Transistor High Breakdown Voltage Low Saturation Voltage Device factory
quality Electronic Component CBI MPSA42U NPN Transistor High Breakdown Voltage Low Saturation Voltage Device factory

Electronic Component CBI MPSA42U NPN Transistor High Breakdown Voltage Low Saturation Voltage Device

Key Attributes
Model Number: MPSA42U
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
250nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
50MHz
Type:
NPN
Current - Collector(Ic):
300mA
Collector - Emitter Voltage VCEO:
300V
Mfr. Part #:
MPSA42U
Package:
SOT-89
Product Description

Product Overview

This NPN transistor is designed for applications requiring high breakdown voltage and low collector-emitter saturation voltage. It serves as a complementary component to the MPSA92U (PNP) transistor. Marked as A42, this component is suitable for various electronic circuits where these characteristics are critical. Its SOT-89 package outline ensures compatibility with standard surface-mount assembly processes.

Product Attributes

  • Complementary to MPSA92U (PNP)
  • Marking: A42
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-89

Technical Specifications

Parameter Symbol Test Conditions Min Max Units
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Collector-Base Voltage VCBO 300 V
Collector-Emitter Voltage VCEO 300 V
Emitter-Base Voltage VEBO 5 V
Collector Current - Continuous IC 0.3 A
Collector Power Dissipation PC 0.35 W
Thermal Resistance, Junction to Ambient RJA 357 /mW
Junction Temperature TJ 150
Storage Temperature Tstg -55 +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 300 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 300 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V
Collector cut-off current ICBO VCB=200V, IE=0 0.25 A
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A
DC current gain hFE hFE(1) VCE= 10V, IC= 1mA 60
DC current gain hFE hFE(2) VCE= 10V, IC=10mA 100 200
DC current gain hFE hFE(3) VCE=10V, IC=30mA 60
Collector-emitter saturation voltage VCE(sat) IC=20mA, IB= 2mA 0.2 V
Base-emitter saturation voltage VBE(sat) IC= 20mA, IB=2mA 0.9 V
Transition frequency fT VCE= 20V, IC= 10mA, f=30MHz 50 MHz
SOT-89 PACKAGE OUTLINE (Dimensions in Millimeters)
Dimension Symbol Min Max
A 1.40 1.60
B 2.95 3.05
b1 1.45 1.70
b2 0.45 0.56
b3 0.35 0.50
C 0.35 0.50
D 4.40 4.60
E 2.35 2.55
HE 3.90 4.40
Lp 0.90 1.10

2410121807_CBI-MPSA42U_C5362126.pdf

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