Power Management MOSFET BORN BSS123 N Channel Enhancement Mode with Low On Resistance and Compact SOT23 Package

Name: Power Management MOSFET BORN BSS123 N Channel Enhancement Mode with Low On Resistance and Compact SOT23 Package
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BSS123
Availability: InStock

Key Attributes

Model Number: BSS123

Product Custom Attributes

Drain To Source Voltage:

100V

Current - Continuous Drain(Id):

200mA

Operating Temperature -:

-40℃~+150℃

RDS(on):

4Ω@4.5V,0.1A

Gate Threshold Voltage (Vgs(th)):

Reverse Transfer Capacitance (Crss@Vds):

2pF@50V

Number:

1 N-channel

Input Capacitance(Ciss):

31.6pF@50V

Pd - Power Dissipation:

200mW

Gate Charge(Qg):

740pC@50V

Mfr. Part #:

BSS123

Package:

SOT-23

Product Description

Product Overview

The BSS123 is an N-Channel Enhancement-Mode MOSFET in a SOT23 package, designed for applications requiring low RDS(on) at 10V VGS. It features 5V logic-level control, HMB ESD protection, and is Pb-Free and RoHS Compliant. This MOSFET is suitable for use as a relay driver, ON/OFF switch, high-speed line driver, and for power management in portable and battery-powered devices.

Product Attributes

Brand: BSS (implied by product code BSS123)
Package Type: SOT23
Material: MOSFET N-Channel Enhancement-Mode
Certifications: PbFree, RoHS Compliant
ESD Protection: HMB ESD Protection

Technical Specifications

Symbol	Parameter	Condition	Min	Typ	Max	Unit
Common Ratings (TA=25C Unless Otherwise Noted)
VGS	Gate-Source Voltage				20	V
(BR)DSS	Drain-Source Breakdown Voltage		100			V
TJ	Maximum Junction Temperature				150	C
T STG	Storage Temperature Range		-50	to	150	C
ID (Pulse)	Pulse Drain Current	Mounted on Large Heat Sink (TA=25C)			0.8	A
ID	Continuous Drain Current	(TA=25C)			0.2	A
ID	Continuous Drain Current	(TA=70C)			0.15	A
PD	Maximum Power Dissipation	(TA=25C)			0.3	W
PD	Maximum Power Dissipation	(TA=70C)			0.2	W
JA	Thermal Resistance Junction-Ambient			400	C/W
Static Electrical Characteristics @ TJ = 25C (unless otherwise stated)
(BR)DSS	Drain-Source Breakdown Voltage	VGS=0V, ID=250A	100			V
IDSS	Zero Gate Voltage Drain Current	VDS=100V, VGS=0V (TA=25)			1	A
IDSS	Zero Gate Voltage Drain Current	VDS=80V, VGS=0V (TA=125)			100	uA
IGSS	Gate-Body Leakage Current	VGS=20V, VDS=0V			10	uA
VGS(TH)	Gate Threshold Voltage	VDS=VGS, ID=250A	1.0	2.0	3.0	V
RDS(ON)	Drain-Source On-State Resistance	VGS=10V, ID=0.2A		3.5	6
RDS(ON)	Drain-Source On-State Resistance	VGS=4.5V, ID=0.1A		4	8
Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated)
Ciss	Input Capacitance	VDS=50V, VGS=0V, f=1MHz		31.6		pF
Coss	Output Capacitance			2.8		pF
Crss	Reverse Transfer Capacitance			2		pF
Qg	Total Gate Charge	VDS=50V, ID=0.2A, VGS=10V		0.74		nC
Qgs	Gate Source Charge			0.08		nC
Qgd	Gate Drain Charge			0.26		nC
Switching Characteristics @ TJ = 25C (unless otherwise stated)
td(on)	Turn on Delay Time	VDD=50V, ID=0.2A, RG=3.3, VGS=10V		2		ns
tr	Turn on Rise Time			3.1		ns
td(off)	Turn Off Delay Time			-6.5		ns
tf	Turn Off Fall Time			15		ns
Source Drain Diode Characteristics @ TJ = 25C (unless otherwise stated)
ISD	Source drain current (Body Diode)	TA=25			0.1	A
VSD	Forward on voltage	Tj=25, ISD=0.2A, VGS=0V		0.85	1.2	V

Order Information

Product	Package	Marking	Packing	Min Unit Quantity
BSS123	SOT23	3000PCS/Reel	3000PCS	3000

Typical Characteristics

Refer to figures provided in the datasheet for typical output characteristics, normalized threshold voltage vs. temperature, typical transfer characteristics, drain-source voltage vs. gate-source voltage, typical source-drain diode forward voltage, maximum safe operating area, typical capacitance vs. drain-source voltage, typical gate charge vs. gate-source voltage, and normalized maximum transient thermal impedance.

Package Outline

SOT-23 PACKAGE OUTLINE: Plastic surface mounted package. Dimensions in mm.

2410121916_BORN-BSS123_C431506.pdf

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