Low voltage MOSFET BLUE ROCKET BRCS60N02DP with TO 252 package featuring fast switching and dissipation

Name: Low voltage MOSFET BLUE ROCKET BRCS60N02DP with TO 252 package featuring fast switching and dissipation
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BRCS60N02DP
Availability: InStock

Key Attributes

Model Number: BRCS60N02DP

Product Custom Attributes

Drain To Source Voltage:

20V

Current - Continuous Drain(Id):

60A

RDS(on):

7mΩ@10V

Gate Threshold Voltage (Vgs(th)):

1V@250uA

Type:

N-Channel

Number:

1 N-channel

Pd - Power Dissipation:

100W

Gate Charge(Qg):

43nC@10V

Mfr. Part #:

BRCS60N02DP

Package:

TO-252

Product Description

Product Overview

The BRCS60N02DP is an N-channel MOSFET housed in a TO-252 plastic package. It offers low RDS(on), low gate charge, low Crss, and fast switching speeds. This halogen-free product is designed for low-voltage applications, including automotive circuits, DC/DC converters, and high-efficiency power management in portable and battery-operated devices.

Product Attributes

Brand: Fsb (implied by URL)
Package Type: TO-252 Plastic Package
Certifications: Halogen-free

Technical Specifications

Parameter	Symbol	Rating	Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage	VDSS	20	V
Drain Current (Tc=25)	ID(Tc=25)	60	A
Drain Current (Tc=100)	ID(Tc=100)	50	A
Drain Current - Pulsed	IDM	210	A
Gate-Source Voltage	VGS	12	V
Avalanche Current	IAS	18.3	A
Avalanche energy (L=0.5mH)	EAS	268	mJ
Power Dissipation (Tc=25)	PD(Tc=25)	100	W
Power Dissipation (Tc=100)	PD(Tc=100)	50	W
Junction and Storage Temperature Range	Tj, Tstg	-55150
Maximum Junction-to-Ambient Steady-State	RJA	62	/W
Maximum Junction-to-Case Steady-State	RJC	1.25	/W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage	BVDSS	20 (VGS=0V, ID=250A)	V
Zero Gate Voltage Drain Current	IDSS	1.0 (VDS=20V, VGS=0V, TJ=55C: 5.0)	A
Gate-Body Leakage Current	IGSS	0.1 (VGS=12V, VDS=0V)	A
Gate Threshold Voltage	VGS(th)	0.3 - 0.6 - 1.0 (VDS=VGS, ID=250A)	V
Static Drain-Source On-Resistance	RDS(on)1	5.5 - 7 (VGS=10V, ID=60A)	m
Static Drain-Source On-Resistance	RDS(on)2	6 - 7 (VGS=4.5V, ID=30A)	m
Static Drain-Source On-Resistance	RDS(on)3	8 - 10 (VGS=2.5V, ID=15A)	m
Diode Forward Voltage	VSD	0.9 - 1.35 (IS=1A, VGS=0V)	V
Electrical Characteristics (Ta=25)
Input Capacitance	Ciss	2380 (VDS=25V, VGS=0V, f=1.0MHz)	pF
Output Capacitance	Coss	65 (VDS=25V, VGS=0V, f=1.0MHz)	pF
Reverse Transfer Capacitance	Crss	165 (VDS=25V, VGS=0V, f=1.0MHz)	pF
Gate resistance	Rg	1.28 (VGS=0V, VDS=0V, f=1MHz)
Total Gate Charge	Qg(4.5V)	28 - 36 - 43 (VGS=10V, VDS=10V, ID=20A)	nC
Gate Source Charge	Qgs	9 (VGS=10V, VDS=10V, ID=20A)	nC
Gate Drain Charge	Qg d	12 (VGS=10V, VDS=10V, ID=20A)	nC
Turn-On Delay Time	td(on)	7 (VGS=10V, VDS=10V, RL=0.5, RGEN=3)	ns
Turn-On Rise Time	tr	8 (VGS=10V, VDS=10V, RL=0.5, RGEN=3)	ns
Turn-Off Delay Time	td(off)	70 (VGS=10V, VDS=10V, RL=0.5, RGEN=3)	ns
Turn-Off Fall Time	tf	18 (VGS=10V, VDS=10V, RL=0.5, RGEN=3)	ns
Body Diode Reverse Recovery Time	trr	13 - 17 - 20 (IF=20A, dI/dt=500A/ms)	ns
Body Diode Reverse Recovery Charge	Qrr	29 - 36 - 43 (IF=20A, dI/dt=500A/ms)	nC

Packaging

Package Type	Units/Reel	Reels/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Reel Dimension (mm)	Inner Box Dimension (mm)	Outer Box Dimension (mm)
TO-252 (Reel)	2,500	2	5,000	5	25,000	1316	36036050	385257392
TO-251/252 (Tube)	75	48	3,600	5	18,000	52620.55.25	55516450	575290180

Marking Instructions

BR: Company Code
60N02: Product Type Code
****: Lot No. Code (code changes with Lot No.)

Example Marking: BR **** 60N02

Soldering Profile (Pb-Free)

Preheating: 150~180, Time: 60~90 sec.
Peak Temp.: 2455, Duration: 50.5 sec.
Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions

Temperature: 2605
Time: 101 sec.

2410121234_BLUE-ROCKET-BRCS60N02DP_C22400491.pdf

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