Plastic Encapsulated PNP Transistor CBI BC856BW Suitable for Switching and AF Amplifier Applications
Key Attributes
Model Number:
BC856BW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-
Mfr. Part #:
BC856BW
Package:
SOT-323
Product Description
Product Overview
These plastic-encapsulated PNP transistors are ideally suited for automatic insertion and are designed for switching and AF amplifier applications. They offer reliable performance in various electronic circuits.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Material: Plastic-Encapsulate
- Type: Transistor (PNP)
Technical Specifications
| Model | Parameter | Value | Unit | Conditions |
|---|---|---|---|---|
| BC856W | Collector-Base Voltage (VCBO) | -80 | V | Ta=25 |
| Collector-Emitter Voltage (VCEO) | -65 | V | Ta=25 | |
| Emitter-Base Voltage (VEBO) | -5 | V | Ta=25 | |
| Collector Current (IC) Continuous | -0.1 | A | Ta=25 | |
| Collector Power Dissipation (PC*) | 150 | mW | Ta=25 | |
| Junction Temperature (TJ) | 150 | |||
| Storage Temperature (Tstg) | -65-150 | |||
| Collector-base breakdown voltage (VCBO) | -80 | V | IC= -10A, IE=0 | |
| Collector-emitter breakdown voltage (VCEO) | -65 | V | IC= -10mA, IB=0 | |
| DC current gain (hFE) | 125-250 | VCE= -5V, IC= -2mA | ||
| BC857W | Collector-Base Voltage (VCBO) | -50 | V | Ta=25 |
| Collector-Emitter Voltage (VCEO) | -45 | V | Ta=25 | |
| Emitter-Base Voltage (VEBO) | -5 | V | Ta=25 | |
| Collector Current (IC) Continuous | -0.1 | A | Ta=25 | |
| Collector Power Dissipation (PC*) | 150 | mW | Ta=25 | |
| Junction Temperature (TJ) | 150 | |||
| Storage Temperature (Tstg) | -65-150 | |||
| Collector-base breakdown voltage (VCBO) | -50 | V | IC= -10A, IE=0 | |
| Collector-emitter breakdown voltage (VCEO) | -45 | V | IC= -10mA, IB=0 | |
| DC current gain (hFE) | 220-475 (BC857AW, BC857BW) 420-800 (BC857CW) | VCE= -5V, IC= -2mA | ||
| BC858W | Collector-Base Voltage (VCBO) | -30 | V | Ta=25 |
| Collector-Emitter Voltage (VCEO) | -30 | V | Ta=25 | |
| Emitter-Base Voltage (VEBO) | -5 | V | Ta=25 | |
| Collector Current (IC) Continuous | -0.1 | A | Ta=25 | |
| Collector Power Dissipation (PC*) | 150 | mW | Ta=25 | |
| Junction Temperature (TJ) | 150 | |||
| Storage Temperature (Tstg) | -65-150 | |||
| Collector-base breakdown voltage (VCBO) | -30 | V | IC= -10A, IE=0 | |
| Collector-emitter breakdown voltage (VCEO) | -30 | V | IC= -10mA, IB=0 | |
| DC current gain (hFE) | 220-475 (BC858AW, BC858BW) 420-800 (BC858CW) | VCE= -5V, IC= -2mA | ||
| General Electrical Characteristics (Ta=25 unless otherwise specified) | ||||
| Collector cut-off current (ICBO) | -15 | nA | VCB= -30 V , IE=0 | |
| Collector-emitter saturation voltage (VCE(sat)) | -0.65 | V | IC=-100mA, IB= -5mA | |
| Base-emitter saturation voltage (VBE(sat)) | -1.1 | V | IC= -100mA, IB= -5mA | |
| Transition frequency (fT) | 100 | MHz | VCE= -5V, IC= -10mA, f=100MHz | |
| Collector capacitance (Cob) | 4.5 | pF | VCB=-10V, f=1MHz | |
Device Marking
- BC856AW: 3A
- BC856BW: 3B
- BC857AW: 3E
- BC857BW: 3F
- BC857CW: 3G
- BC858AW: 3J
- BC858BW: 3K
- BC858CW: 3L
Package Outline
- Package Type: SOT-323
- Description: Plastic surface mounted package; 3 leads
Pin Configuration (SOT-323)
- BASE
- EMITTER
- COLLECTOR
2410121326_CBI-BC856BW_C2919781.pdf
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