General purpose electronic transistor CBI BC849CW NPN silicon epitaxial planar for switching circuits
Key Attributes
Model Number:
BC849CW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
30V
Mfr. Part #:
BC849CW
Package:
SOT-323
Product Description
Product Overview
This NPN Silicon Epitaxial Planar Transistor is designed for general purpose and switching applications. It offers a range of models (BC846W, BC847W, BC848W, BC849W, BC850W) with varying voltage and current ratings.
Product Attributes
- Type: NPN Silicon Epitaxial Planar Transistor
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Models | Value | Unit |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | ||||
| Collector Base Voltage | VCBO | BC846W, BC847W, BC848W, BC849W, BC850W | 80, 50, 30, 30, 50 | V |
| Collector Emitter Voltage | VCEO | BC846W, BC847W, BC848W, BC849W, BC850W | 65, 45, 30, 30, 45 | V |
| Emitter Base Voltage | VEBO | BC846W, BC847W, BC848W, BC849W, BC850W | 6, 6, 5, 5, 5 | V |
| Collector Current | IC | - | 100 | mA |
| Peak Collector Current | ICM | - | 200 | mA |
| Total Power Dissipation | Ptot | - | 200 | mW |
| Junction Temperature | Tj | - | 150 | C |
| Storage Temperature Range | Tstg | - | -55 to +150 | C |
| Characteristics at Ta = 25 C | ||||
| DC Current Gain | hFE | BC846AW~BC850AW | 110-220 | - |
| DC Current Gain | hFE | BC846BW~BC850BW | 200-450 | - |
| DC Current Gain | hFE | BC846CW~BC850CW | 420-800 | - |
| Collector Base Voltage (at IC = 10 A) | VCBO | BC846W, BC847W, BC848W, BC849W, BC850W | 80, 50, 30, 30, 50 | V |
| Collector Emitter Voltage (at IC = 10 mA) | VCEO | BC846W, BC847W, BC848W, BC849W, BC850W | 65, 45, 30, 30, 45 | V |
| Emitter Base Voltage (at IE = 1 A) | VEBO | BC846W, BC847W, BC848W, BC849W, BC850W | 6, 6, 5, 5, 5 | V |
| Collector Base Cutoff Current (at VCB = 30 V) | ICBO | - | -15 | nA |
| Emitter Base Cutoff Current (at VEB = 5 V) | IEBO | - | -100 | nA |
| Collector Emitter Saturation Voltage | VCE(sat) | IC = 10 mA, IB = 0.5 mA | -0.25 | V |
| Collector Emitter Saturation Voltage | VCE(sat) | IC = 100 mA, IB = 5 mA | -0.6 | V |
| Base Emitter Voltage (at VCE = 5 V, IC = 2 mA) | VBE | - | 0.58-0.7 | V |
| Base Emitter Voltage (at VCE = 5 V, IC = 10 mA) | VBE | - | 0.7-0.77 | V |
| Transition Frequency (at VCE = 5 V, IC = 10 mA, f = 100 MHz) | fT | - | 100 | MHz |
| Collector Output Capacitance (at VCB = 10 V, IE = 0, f = 1 MHz) | Cob | - | -4.5 | pF |
| Dimensions (in Millimeters) | ||||
| Dimension | Symbol | Min | Max | Unit |
| - | A | 0.90 | 1.00 | - |
| - | A1 | 0.010 | 0.100 | - |
| - | B | 1.20 | 1.40 | - |
| - | bp | 0.25 | 0.45 | - |
| - | C | 0.09 | 0.15 | - |
| - | D | 2.00 | 2.20 | - |
| - | E | 1.15 | 1.35 | - |
| - | HE | 2.15 | 2.55 | - |
| - | Lp | 0.25 | 0.46 | - |
| - | 0 | 6 | - | |
2410121440_CBI-BC849CW_C21714267.pdf
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