Low On Resistance N Channel MOSFET BORN AO3404 Featuring High Density Cell Design and SOT 23 Package
Key Attributes
Model Number:
AO3404
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
82pF
Number:
-
Output Capacitance(Coss):
115pF
Input Capacitance(Ciss):
820pF
Mfr. Part #:
AO3404
Package:
SOT-23
Product Description
Product Overview
The AO3404 is an N-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is available in a SOT-23 surface mount package, making it suitable for various electronic applications. Key electrical characteristics include a drain-source voltage of 30V and a continuous drain current of 5.5A. The device offers a typical on-resistance of 24m at VGS=10V and 32m at VGS=4.5V.
Product Attributes
- Brand: Not explicitly stated, but associated with 'born-tw.com'
- Package Type: SOT-23
- Channel Type: N-Channel MOSFET
- Technology: Advanced trench process technology, High Density Cell Design
- Origin: Not explicitly stated, but associated with 'born-tw.com'
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings @TA=25 | ||||||
| Drain-source voltage | VDS | 30 | V | |||
| Gate-source voltage | VGS | 20 | V | |||
| Continuous drain current (t 10s) | ID | 5.5 | A | |||
| Pulsed drain current | IDM | * | 25 | A | ||
| Thermal resistance from junction to ambient | RJA | 357 | /W | |||
| Junction temperature | TJ | 150 | ||||
| Storage temperature | Tstg | -55 | 150 | |||
| Electrical Characteristics @TA=25 unless otherwise noted | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =30V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =20V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1 | 1.5 | 2.5 | V |
| Drain-source on-resistance | RDS(ON) | VGS =10V, ID =4A | 24 | 30 | m | |
| Drain-source on-resistance (note 1) | RDS(ON) | VGS =4.5V, ID =3A | 32 | 42 | ||
| Forward tranconductance (note 1) | gFS | VDS =5V, ID =5A | 5 | S | ||
| Diode forward voltage | VSD | IS =1A | 1 | V | ||
| Dynamic Parameters (note 2) | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V,f =1MHz | 820 | pF | ||
| Output capacitance | Coss | VDS =15V,VGS =0V,f =1MHz | 115 | pF | ||
| Reverse transfer capacitance | Crss | VDS =15V,VGS =0V,f =1MHz | 82 | pF | ||
| Gate resistance | Rg | VDS =0V,VGS =0V,f =1MHz | 1.5 | |||
| Switching Parameters (note 2) | ||||||
| Turn-on delay time | td(on) | VGS=10V,VDS=15V, RL=2.6,RGEN=3 | 6.5 | ns | ||
| Turn-on rise time | tr | VGS=10V,VDS=15V, RL=2.6,RGEN=3 | 3.1 | ns | ||
| Turn-off delay time | td(off) | VGS=10V,VDS=15V, RL=2.6,RGEN=3 | 15.1 | ns | ||
| Turn-off fall time | tf | VGS=10V,VDS=15V, RL=2.6,RGEN=3 | 2.7 | ns | ||
Notes:
- 1. Pulse Test: Pulse width 300s, duty cycle 0.5%.
- 2. These parameters have no way to verify.
Ordering Information:
| Order Code | Package | Base Qty | Delivery Mode | Marking |
|---|---|---|---|---|
| AO3404 | SOT-23 | 3K | Tape and reel | 3404 |
2410121909_BORN-AO3404_C20416639.pdf
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