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quality NPN Silicon Epitaxial Planar Transistor CBI MPSA44U for High Voltage Electronic Circuit Applications factory
quality NPN Silicon Epitaxial Planar Transistor CBI MPSA44U for High Voltage Electronic Circuit Applications factory

NPN Silicon Epitaxial Planar Transistor CBI MPSA44U for High Voltage Electronic Circuit Applications

Key Attributes
Model Number: MPSA44U
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
625mW
Type:
NPN
Current - Collector(Ic):
300mA
Collector - Emitter Voltage VCEO:
400V
Mfr. Part #:
MPSA44U
Package:
SOT-89
Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for high voltage switching and amplifier applications. It offers reliable performance with specific electrical characteristics suitable for various electronic circuits.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Material: Silicon Epitaxial Planar
  • Package: SOT-89

Technical Specifications

Parameter Symbol Value Unit Conditions
Absolute Maximum Ratings
Collector Base Voltage VCBO 500 V (Ta = 25 OC)
Collector Emitter Voltage VCEO 400 V (Ta = 25 OC)
Emitter Base Voltage VEBO 6 V (Ta = 25 OC)
Collector Current IC 300 mA (Ta = 25 OC)
Total Power Dissipation Ptot 625 mW (Ta = 25 OC)
Junction Temperature Tj 150 OC
Storage Temperature Range Tstg -55 to +150 OC
Characteristics
DC Current Gain hFE 40 - VCE = 10 V, IC = 1 mA
DC Current Gain hFE 50 - VCE = 10 V, IC = 10 mA
DC Current Gain hFE 45 - VCE = 10 V, IC = 50 mA
DC Current Gain hFE 40 - VCE = 10 V, IC = 100 mA
Collector Base Cutoff Current ICBO -0.1 A VCB = 400 V
Collector Emitter Cutoff Current ICES -0.5 A VCE = 400 V
Emitter Base Cutoff Current IEBO -0.1 A VEB = 4 V
Collector Base Breakdown Voltage V(BR)CBO 500 V IC = 100 A
Collector Emitter Breakdown Voltage V(BR)CEO 400 V IC = 1 mA
Emitter Base Breakdown Voltage V(BR)EBO 6 V IE = 100 A
Collector Emitter Saturation Voltage VCE(sat) 0.4 V IC = 1 mA, IB = 0.1 mA
Collector Emitter Saturation Voltage VCE(sat) 0.5 V IC = 10 mA, IB = 1 mA
Collector Emitter Saturation Voltage VCE(sat) 0.75 V IC = 50 mA, IB = 5 mA
Base Emitter Saturation Voltage VBE(sat) 0.75 V IC = 10 mA, IB = 1 mA
Collector Output Capacitance Cob 7 pF VCB = 20 V, f = 1 MHz

2303011800_CBI-MPSA44U_C5362127.pdf

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