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quality Surface mount N Channel MOSFET BORN BNST02N10 with ultra low on resistance and compact SOT 23 package factory
quality Surface mount N Channel MOSFET BORN BNST02N10 with ultra low on resistance and compact SOT 23 package factory

Surface mount N Channel MOSFET BORN BNST02N10 with ultra low on resistance and compact SOT 23 package

Key Attributes
Model Number: BNST02N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2A
RDS(on):
290mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Input Capacitance(Ciss):
326pF
Pd - Power Dissipation:
1.25W
Output Capacitance(Coss):
38pF
Mfr. Part #:
BNST02N10
Package:
SOT-23
Product Description

Product Overview

The BNST02N10 is an N-Channel MOSFET from BORN SEMICONDUCTOR, INC. Engineered with advanced trench process technology and a high-density cell design, it offers an ultra-low on-resistance. This MOSFET is suitable for surface mount applications and is provided in a SOT-23 package.

Product Attributes

  • Brand: BORN SEMICONDUCTOR, INC.
  • Model: BNST02N10
  • Type: N-Channel MOSFET
  • Package: SOT-23
  • Package Marking: 0102
  • Delivery Mode: Tape and reel
  • Base Quantity: 3K

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Features
VDS Drain-Source Voltage 100 V
ID Continuous Drain Current 2 A
RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=2A 230 290 m
RDS(ON) Drain-Source On-State Resistance VGS=4.5V, ID=2A 240 330 m
Absolute Maximum Ratings (@TA=25C unless otherwise noted)
BVDSS Drain-Source Voltage 100 V
VGS Gate-Source Voltage 20 V
ID Continuous Drain Current 2 A
IDM Pulsed Drain Current 8 A
PD Maximum Power Dissipation TA = 25C 1.25 W
TJ Junction Range 150 C
Tstg Storage Temperature Range -55 +150 C
Electrical Characteristics (@TA=25C unless otherwise noted)
BVDS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 100 V
RDS(on) Drain-Source On-State Resistance (1) VGS = 10V, ID = 2A 230 290 m
RDS(on) Drain-Source On-State Resistance (1) VGS = 4.5V, ID = 2A 240 330 m
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 1.0 1.6 2.5 V
IDSS Zero Gate Voltage Drain Current VDS = 100V, VGS = 0V 1 uA
IGSS Gate Body Leakage VGS = 20V, VDS = 0V 100 nA
td(on) Turn-On Delay Time VDS = 50V, RGEN = 6, ID = 2A 10 ns
td(off) Turn-Off Delay Time VDS = 50V, RGEN = 6, ID = 2A 30 ns
Ciss Input Capacitance VDS = 15V, VGS = 10V, f=1MHz 326 pF
Coss Output Capacitance VDS = 15V, VGS = 10V, f=1MHz 38 pF
Source-Drain Diode
VSD Diode Forward Voltage IS = 2.0A,VGS = 0V 1.2 V

Notes: (1) Pulse test pulse width <=300us, duty cycle <= 2%.

Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information.


2504231555_BORN-BNST02N10_C48533912.pdf

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