Low voltage plastic encapsulated PNP transistor CBI 2SB1197KR with continuous collector current minus 0.8A
Key Attributes
Model Number:
2SB1197KR
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
500nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
200MHz
Number:
1 PNP
Current - Collector(Ic):
800mA
Collector - Emitter Voltage VCEO:
32V
Mfr. Part #:
2SB1197KR
Package:
SOT-23
Product Description
Product Overview
This is a plastic-encapsulated PNP transistor designed for general-purpose applications. It features a low VCE(sat) of less than -0.5V at IC / IB = -0.5A / -50mA and a continuous collector current (IC) of -0.8A. This transistor complements the 2SD1781 and is suitable for use in various electronic circuits requiring PNP amplification or switching capabilities.
Product Attributes
- Type: Transistor (PNP)
- Encapsulation: Plastic-Encapsulate
- Package: SOT-23
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||||
| VCBO | Collector-Base Voltage | -40 | V | |||
| VCEO | Collector-Emitter Voltage | -32 | V | |||
| VEBO | Emitter-Base Voltage | -5 | V | |||
| IC | Collector Current - Continuous | -0.8 | A | |||
| PC | Collector Power Dissipation | 200 | mW | |||
| TJ | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | 150 | |||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||||
| V(BR)CBO | Collector-base breakdown voltage | IC =-50A, IE=0 | -40 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC = -1mA, IB=0 | -32 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE= -50A, IC=0 | -5 | V | ||
| ICBO | Collector cut-off current | VCB=-20V,IE=0 | -0.5 | A | ||
| IEBO | Emitter cut-off current | VEB= -4V,IC=0 | -0.5 | A | ||
| hFE | DC current gain | VCE=-3V,IC= -100mA | 82 | 390 | ||
| VCE(sat) | Collector-emitter saturation voltage | IC=-500 mA, IB= -50mA | -0.5 | V | ||
| fT | Transition frequency | VCE=-5V, IC= -50mA, f=100MHz | 50 | 200 | MHz | |
| Cob | Collector output capacitance | VCB=-10V,IE=0,f=1MHz | 12 | 30 | pF | |
hFE Classification
| Rank | Range | Marking |
|---|---|---|
| P | 82-180 | AHP |
| Q | 120-270 | AHQ |
| R | 180-390 | AHR |
2508261745_CBI-2SB1197KR_C5362088.pdf
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