High Density Cell Design and Ultra Low On Resistance P Channel MOSFET BORN SI2333 in SOT 23 Package
Key Attributes
Model Number:
SI2333
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
5.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
59mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Number:
1 P-Channel
Input Capacitance(Ciss):
920pF@10V
Pd - Power Dissipation:
1.25W
Mfr. Part #:
SI2333
Package:
SOT-23
Product Description
Product Overview
The SI2333 is a P-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is available in a SOT-23 surface mount package. Key electrical characteristics include a drain-source breakdown voltage of -12V, a gate threshold voltage between -0.4V and -1V, and low on-state resistances of 28m at VGS = -4.5V and 38m at VGS = -2.5V (typ.). This MOSFET is suitable for applications requiring efficient power switching.
Product Attributes
- Brand: Not explicitly stated, but associated with "born-tw.com"
- Package Type: SOT-23
- Process Technology: Advanced trench
- Cell Design: High Density for Ultra Low On-Resistance
- Marking: 2333
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -12 | V | ID = -250uA, VGS=0V | ||
| Gate Threshold Voltage | VGS(th) | -0.4 | -1 | V | ID = -250uA, VGS= VDS | |
| Diode Forward Voltage Drop | VSD | -1.2 | V | IS = -1 A, VGS=0V | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VGS=0V, VDS= -12V | ||
| Gate Body Leakage | IGSS | +100 | nA | VGS=+8V, VDS=0V | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 28 | m | ID= -5.1A, VGS= -4.5V | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 38 | m | ID= -4.5A, VGS= -2.5V | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 50 | 59 | m | ID= -2 A, VGS= -1.8V | |
| Input Capacitance | CISS | 920 | pF | VGS=0V, VDS= -10V, f=1MHz | ||
| Output Capacitance | COSS | 220 | pF | VGS=0V, VDS= -10V, f=1MHz | ||
| Turn-ON Time | t(on) | 8 | ns | VDS= -10V, ID= -2A, RGEN=6 | ||
| Turn-OFF Time | t(off) | 60 | ns | VDS= -10V, ID= -2A, RGEN=6 | ||
| Drain-Source Voltage | BVDSS | -12 | V | |||
| Gate-Source Voltage | VGS | +8 | V | |||
| Drain Current (continuous) | ID | -5.1 | A | @TA=25 | ||
| Drain Current (pulsed) | IDM | -20 | A | |||
| Total Device Dissipation | PD | 1250 | mW | TA=25 | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Package | SOT-23 | Surface Mount | ||||
| Ordering Code | SI2333 | SOT-23, 3K Tape and reel |
2410121812_BORN-SI2333_C344008.pdf
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