Battery Protection Load Switch P Channel Transistor BLUE ROCKET BRCS4443SC with SOP 8 Package Design

Key Attributes
Model Number: BRCS4443SC
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
42mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
72pF
Number:
1 P-Channel
Output Capacitance(Coss):
97pF
Input Capacitance(Ciss):
1.175nF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
BRCS4443SC
Package:
SOP-8
Product Description

Product Overview

The BRCS4443SC is a P-Channel Enhancement Mode Field Effect Transistor designed for use in a SOP-8 plastic package. It is suitable for battery protection and load switch applications. Key features include a Drain-Source Voltage (VDS) of -40V, a continuous Drain Current (ID) of -6A at VGS = -10V, and a low on-resistance (RDS(ON)) of less than 42m at VGS = -10V and less than 63m at VGS = -4.5V.

Product Attributes

  • Brand: FS (implied by URL http://www.fsbrec.com)
  • Package Type: SOP-8 Plastic Package
  • Channel Type: P-Channel
  • Mode: Enhancement Mode
  • Marking Code: BR **** 4443 (BR: Company Code, 4443: Product Type, ****: Lot No. Code)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDSS -40 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID (Ta=25C) -6 A
Continuous Drain Current ID (Ta=70C) -5 A
Pulsed Drain Current IDM C -40 A
Avalanche Current IAS, IAR C 20 A
Avalanche energy EAS, EAR L=0.1mH C 20 mJ
Power Dissipation PD (Ta=25) B 3.1 W
Power Dissipation PD (Ta=70) B 2 W
Junction and Storage Temperature Range Tj ,Tstg -55 150
Thermal Characteristics
Maximum Junction-to-Ambient RJA t 10s A 31 40 /W
Maximum Junction-to-Ambient RJA D 59 75 /W
Maximum Junction-to-Lead RJL 16 24 /W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage BVDSS ID=-250A VGS=0V -40 V
Zero Gate Voltage Drain Current IDSS VDS=-40 VGS=0V -1.0 A
Zero Gate Voltage Drain Current IDSS VDS=-40 VGS=0V TJ=55C -5.0 A
Gate-Body leakage current IGSS VDS=0V VGS=20 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS ID=-250A -1.5 -2.0 -2.6 V
On state drain current ID(ON) VGS=-10V VDS=-5V 40 A
Static Drain-Source On-Resistance RDS(ON) VGS=-10V ID=-6A 35 42 m
Static Drain-Source On-Resistance RDS(ON) VGS=-10V ID=-6A TJ=125C 53 65 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V ID=-5.0A 46.5 63 m
Forward Transconductance gFS VDS=-5V ID=-6A 17 S
Diode Forward Voltage VSD IS=-1A VGS=0V -0.76 -1.0 V
Maximum Body-Diode Continuous Current IS -3.5 A
Total Gate Charge Qg(10V) VGS=-10V VDS=-20V ID=-6A 17.3 22 nC
Total Gate Charge Qg(4.5V) 8.4 11 nC
Gate-Source Charge Qgs 3.2 nC
Gate-Drain Charge Qgd 4.3 nC
Gate Resistance Rg VGS=0V VDS=0V f=1MHz 7.0 14
Input Capacitance Ciss VGS=0V VDS=-20V f=1MHz 750 940 pF
Output Capacitance Coss 97 pF
Reverse Transfer Capacitance Crss 72 pF
Turn-on Delay Time td(ON) VGS=-10V VDS=-20V RL=3.35 RGEN=3 10.3 ns
Turn-on Rise Time tr 4.3 ns
Turn-off Delay Time td(OFF) 39 ns
Turn-off Fall Time tf 46.5 ns
Body Diode Reverse Recovery Time trr IF=-6A dI/dt=100A/s 17 24 ns
Body Diode Reverse Recovery Charge Qrr IF=-6A dI/dt=100A/s 11.5 nC

Package Dimensions: Refer to page 8 of the datasheet.

Soldering Profile: Temperature Profile for IR Reflow Soldering (Pb-Free) specified on page 9.

Resistance to Soldering Heat Test Conditions: Temperature: 2605, Time: 101 sec.

Packaging Specifications: REEL Package Type SOP/ESOP-8, 4,000 Units/Reel.


2409271633_BLUE-ROCKET-BRCS4443SC_C22448999.pdf

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