Power switching N channel MOSFET BORN BMQ100N38 featuring 100V 38A low gate charge and RoHS compliance
Key Attributes
Model Number:
BMQ100N38
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
38A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF
Output Capacitance(Coss):
445pF
Input Capacitance(Ciss):
2.2nF
Pd - Power Dissipation:
23W
Gate Charge(Qg):
17nC@10V
Mfr. Part #:
BMQ100N38
Package:
DFN3333-8L
Product Description
Product Overview
The BMQ100N38 is a 100V/38A N-channel Power MOSFET designed for efficient power management and current switching applications. It features ultra-low RDS(on) at 7.0m (Typ.) at VGS = 10V and 9.0m (Typ.) at VGS = 4.5V, along with low gate charge. This MOSFET is Pb-free lead-plated, halogen-free, and RoHS-compliant, making it suitable for demanding applications in computing, consumer electronics, Industry 4.0, and communication systems. It is also ideal for current switching in DC/DC and AC/DC (SR) sub-systems, load switching, quick/wireless charging, and motor driving.
Product Attributes
- Brand: BORN (implied by URL)
- Type: N-channel Power MOSFET
- Compliance: Pb-free Lead Plating, Halogen-free, RoHS-compliant
- Package: DFN3333-8L
Technical Specifications
| Model | VDS (V) | ID (A) @ VGS=10V | Typ. RDS(ON) @ VGS=10V (m) | Typ. RDS(ON) @ VGS=4.5V (m) | Package | Ordering Information |
|---|---|---|---|---|---|---|
| BMQ100N38 | 100 | 38 | 7.0 | 9.0 | DFN3333-8L | BMQ100N38, DFN3333-8L, 8 Pins, BN1008A, MSL 1, Tj -55 to 150 C, 13'' Reel, 5000 pcs |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current | ID | TC=25C | 38 | A | ||
| Drain Current | ID | TC=100C | 25 | A | ||
| Drain Current-Pulse | IDM | 132 | A | |||
| Avalanche Current | IAS | 29 | A | |||
| Avalanche Energy | EAS | 122 | mJ | |||
| Power Dissipation | PD | TC=25C | 23 | W | ||
| Power Dissipation | PD | TC=100C | 9.3 | W | ||
| Junction Storage Temperature Range | TJ,Tstg | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| Thermal Resistance from Junction to Case | RJC | 4.5 | 5.4 | C/W | ||
| Thermal Resistance From Junction to Ambient | RJA | (Note 3) | 60 | 75 | C/W | |
| Electrical Characteristics (TA=25C unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID=250uA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 80V ,Tj=25C | 1 | uA | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, Tj=55C | 5 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS = 20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS = VDS, IDS=250uA | 1.2 | 1.8 | 2.5 | V |
| Static Drain-source On Resistance | RDS(on) | VGS=10V, ID=20A | 7.0 | 9.0 | m | |
| Static Drain-source On Resistance | RDS(on) | VGS=4.5V, ID=15A | 9.0 | 11.5 | m | |
| Forward Transconductance | gFS | VDS= 5V,ID= 20A | 82 | S | ||
| Diode Forward Voltage | VSD | IS= 1A,VGS= 0V | 0.70 | 1.0 | V | |
| Diode Continuous Current | IS | TC=25C | 23 | A | ||
| Dynamic Parameters | ||||||
| Input capacitance | Ciss | VDS = 50V, VGS =0V, f = 1MHz | 2200 | PF | ||
| Output capacitance | Coss | 445 | PF | |||
| Reverse transfer capacitance | Crss | 8 | PF | |||
| Gate Resistance | Rg | VGS = 0V, VDS= 0V, f = 1MHz | 2 | |||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VDS=50V, VGS=0 to 10V, ID=20A | 34 | nC | ||
| Total Gate Charge | Qg | 17 | nC | |||
| Gate to Source Charge | Qgs | 5.5 | nC | |||
| Gate to Drain Charge | Qgd | 5.7 | nC | |||
| Turn-on delay time | Td(on) | VDS=50V, VGS=10V, RG =6,RL =2.5 | 13 | nS | ||
| Turn-on Rise time | Tr | 14 | nS | |||
| Turn -Off Delay Time | Td(off) | 29 | nS | |||
| Turn-Off Fall time | Tf | 17 | nS | |||
| Reverse Recovery Time | Trr | IF =15A, di/dt=100A/s | 49 | nS | ||
| Reverse Recovery Charge | Qrr | 43 | nC | |||
Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information.
2501061745_BORN-BMQ100N38_C42432421.pdf
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