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quality High Voltage N Channel MOSFET BORN BME10N65 Featuring 650V VDSS and Low Gate Charge for Power Switching factory
quality High Voltage N Channel MOSFET BORN BME10N65 Featuring 650V VDSS and Low Gate Charge for Power Switching factory

High Voltage N Channel MOSFET BORN BME10N65 Featuring 650V VDSS and Low Gate Charge for Power Switching

Key Attributes
Model Number: BME10N65
Product Custom Attributes
Mfr. Part #:
BME10N65
Package:
TO-220AB
Product Description

Product Overview

The BMx10N65 is a high-performance N-Channel MOSFET from BORN SEMICONDUCTOR, INC. Designed for power switch circuits in adaptors and chargers, this MOSFET boasts a VDSS of 650V and an ID of 10A. It offers fast switching speeds and a low gate charge, with a typical RDS(ON) of 0.79 at VGS=10V. The device is constructed with molded plastic meeting UL Flammability Classification Rating 94V-0 and is compliant with the EU RoHS 2011/65/EU directive.

Product Attributes

  • Brand: BORN SEMICONDUCTOR, INC.
  • Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
  • Compliance: EU RoHS 2011/65/EU directive
  • Lead Status: Lead free

Technical Specifications

Model Package VDSS (V) ID (A) RDS(ON) @VGS=10V (, Typ) Base Quantity Delivery Mode
BMx10N65 TO-220AB 650 10 0.79 50pcs/tube 1kpcs/box, 5kpcs/carton
BMx10N65 TO-220F 650 10 0.79 50pcs/tube 1kpcs/box, 5kpcs/carton
BMx10N65 TO-263 650 10 0.79 50pcs/tube 1kpcs/box, 5kpcs/carton
BMx10N65-R TO-263 650 10 0.79 800pcs/reel 800pcs/box, 4kpcs/carton
Symbol Parameters Conditions Value (TO-220AB/TO-263) Value (TO-220F) Unit
VDS Drain-Source Voltage @TA=25C unless otherwise noted 650 650 V
VGS Gate-Source Voltage @TA=25C unless otherwise noted 30 30 V
ID Continue Drain Current @TA=25C unless otherwise noted 10 10 A
IDM Pulsed Drain Current (Note 1) @TA=25C unless otherwise noted 40 40 A
PD Power Dissipation @TA=25C unless otherwise noted 150 31 W
EAS Single Pulse Avalanche Energy (Note 1) @TA=25C unless otherwise noted 845 845 mJ
TJ Junction Temperature Range @TA=25C unless otherwise noted 150 150 C
TSTG Storage Temperature Range @TA=25C unless otherwise noted -55 to +150 -55 to +150 C
RJC Thermal Resistance, Junction to Case @TA=25C unless otherwise noted 0.83 4 C/W
RJA Thermal Resistance, Junction to Ambient @TA=25C unless otherwise noted 62.5 62.5 C/W
Symbol Parameters Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID=250uA 650 690 V
IDSS Zero Gate Voltage Drain Current VDS = 650V, VGS=0V 1 A
IGSS Gate-Source Leakage Current VGS = 30V, VDS=0V 100 nA
VGS(TH) Gate Threshold Voltage VGS = VDS, ID=250uA 2 4 V
RDS(on) Static Drain-source On Resistance VGS=10V, ID=5A 0.79 0.9
gfs Forward Transconductance VDS=40V, ID=5A 11 S
Ciss Input capacitance VDS = 25V, VGS =0V, f = 1MHz 1720 pF
Coss Output capacitance VDS = 25V, VGS =0V, f = 1MHz 140 pF
Crss Reverse transfer capacitance VDS = 25V, VGS =0V, f = 1MHz 11 pF
td(on) Turn-on delay time (Note 1) VDD=325V, ID =10A, RG =25 23 ns
tr Turn-on Rise time (Note 1) VDD=325V, ID =10A, RG =25 15 ns
td(off) Turn-Off Delay Time (Note 1) VDD=325V, ID =10A, RG =25 90 ns
tf Turn-Off Fall time (Note 1) VDD=325V, ID =10A, RG =25 30 ns
Qgs Gate to Source Charge (Note 1) VDD=520V, VGS=10V, ID=10A 5 nC
Qgd Gate to Drain Charge (Note 1) VDD=520V, VGS=10V, ID=10A 16 nC
Qg Total Gate Charge (Note 1) VDD=520V, VGS=10V, ID=10A 32 nC
VSD Diode Forward Voltage ISD=10A 1.1 V
IS Diode Forward Current ISD=10A 10 A
ISM Diode Pulsed Current ISD=10A 40 A
trr Reverse Recovery Time (Note 1) ISD =10A, VGS=0V, dIF/dt=100A/s 310 ns
Qrr Reverse Recovery Charge (Note 1) ISD =10A, VGS=0V, dIF/dt=100A/s 4.1 C

Note 1: Pulse test: 300 s pulse width, 2% duty cycle.

Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information.


2512111635_BORN-BME10N65_C52993700.pdf

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