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quality Dual NPN transistor CBI MMDT3904DW in compact SOT363 package suitable for amplification and switching factory
quality Dual NPN transistor CBI MMDT3904DW in compact SOT363 package suitable for amplification and switching factory

Dual NPN transistor CBI MMDT3904DW in compact SOT363 package suitable for amplification and switching

Key Attributes
Model Number: MMDT3904DW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
2 NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMDT3904DW
Package:
SOT-363
Product Description

Product Overview

The MMDT3904DW is a SOT-363 plastic-encapsulated dual NPN transistor designed for low power amplification and switching applications. It features epitaxial planar die construction for reliable performance.

Product Attributes

  • Package: SOT-363
  • Transistor Type: Dual NPN (NPN+NPN)
  • Marking Code: K6N

Technical Specifications

Symbol Parameter Test Conditions Min Typ Max Units
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current - Continuous 0.2 A
PC Collector Power Dissipation 0.2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
V(BR)CBO Collector-base breakdown voltage IC=10A, IE=0 60 V
V(BR)CEO Collector-emitter breakdown voltage IC=1mA, IB=0 40 V
V(BR)EBO Emitter-base breakdown voltage IE=10A, IC=0 5 V
ICBO Collector cut-off current VCB=30V, IE=0 0.05 A
IEBO Emitter cut-off current VEB=5V, IC=0 0.05 A
hFE DC current gain VCE=1V, IC=0.1mA 40
VCE=1V, IC=1mA 70
VCE=1V, IC=10mA 100 300
VCE=1V, IC=50mA 60
hFE(5) DC current gain VCE=1V, IC=100mA 30
VCE(sat)1 Collector-emitter saturation voltage IC=10mA, IB=1mA 0.2 V
VCE(sat)2 Collector-emitter saturation voltage IC=50mA, IB=5mA 0.3 V
VBE(sat)1 Base-emitter saturation voltage IC=10mA, IB=1mA 0.65 0.85 V
VBE(sat)2 Base-emitter saturation voltage IC=50mA, IB=5mA 0.95 V
fT Transition frequency VCE=20V, IC=10mA, f=100MHz 300 MHz
Cob Collector output capacitance VCB=5V, IE=0, f=1MHz 4 pF
NF Noise figure VCE=5V, IC=0.1mA, f=1kHz, RS=1K 5 dB
td Delay time 35 nS
tr Rise time VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=-IB2=1mA 35 nS
ts Storage time 200 nS
tf Fall time VCC=3V, IC=10mA, IB1=-IB2=1mA 50 nS
ICEX Collector cut-off current VCE=30V, VBE(off)=3V 0.05 A

2410121326_CBI-MMDT3904DW_C2828437.pdf

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