quality N Channel MOSFET BLUE ROCKET BRCS019N10SHTL with Low On Resistance and High Continuous Drain Current factory

N Channel MOSFET BLUE ROCKET BRCS019N10SHTL with Low On Resistance and High Continuous Drain Current

Name: N Channel MOSFET BLUE ROCKET BRCS019N10SHTL with Low On Resistance and High Continuous Drain Current
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BRCS019N10SHTL
Availability: InStock

Key Attributes

Model Number: BRCS019N10SHTL

Product Custom Attributes

Mfr. Part #:

BRCS019N10SHTL

Package:

TOLL-8L

Product Description

Product Overview

The BRCS019N10SHTL is an N-Channel MOSFET designed for high-power applications. It features a TOLL-8L plastic package and is a Halogen-Free (HF) product. This MOSFET is suitable for use in LCD TV appliances and high-power inverter systems, offering a drain-source voltage of 100V and a continuous drain current of 292A. Its low on-resistance, typically 1.6m at 10V, makes it efficient for demanding power conversion tasks.

Product Attributes

Brand: FSB (implied by URL http://www.fsbrec.com)
Product Type: N-Channel MOSFET
Package Type: TOLL-8L Plastic Package
Material: Halogen-Free (HF Product)
Marking Code: BR (Company Code), 019N10SH (Product Type Code), **** (Lot No. Code)

Technical Specifications

Parameter	Symbol	Rating	Unit
Drain-Source Voltage	VDS	100	V
Drain Current - Continuous	ID	292	A
Drain Current - Continuous (Tc=100)	ID(Tc=100)	292	A
Drain Current Pulsed	IDM	1168	A
Gate-Source Voltage	VGS	±20	V
Power Dissipation	Ptot	312.5	W
Continuous-Source Current	IS	292	A
Single Pulse Avalanche Energy (VDD=50V, L=1mH)	EAS	1225	mJ
Junction and Storage Temperature Range	Tj, Tstg	-55 to 175
Thermal resistance, junction - ambient Steady-State	RJA	45	/ W
Thermal resistance, junction - case Steady-State	RJC	0.3	/ W

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	BVDSS	ID=250uA, VGS=0V			100	V
Zero Gate Voltage Drain Current	IDSS	VDS=80V, VGS=0V		1	µA	µA
Gate-Body leakage current	IGSS	VDS=0V, VGS=±20V		±100	nA	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS, ID=250uA	2.0	4.0	V	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=10V, ID=50A		1.6	1.9	mΩ
Diode Forward Voltage	VSD	IS=50A, VGS=0V		1.3	V	V
Input Capacitance	Ciss	VDS=50V, VGS=0V, f=1.0MHz		11132	pF	pF
Output Capacitance	Coss			2780	pF	pF
Reverse Transfer Capacitance	Crss			532	pF	pF
Total Gate Charge	Qg	VGS=10V, VDS=50V, IDS=50A		168	nC	nC
Gate Source Charge	Qgs			59	nC	nC
Gate Drain Charge	Qgd			35	nC	nC
Turn-On Delay Time	td(on)	VGS=10V, VDS=50V, RL=1Ω, RG=3.9Ω, IDS=50A		59	ns	ns
Turn-On Rise Time	tr			66	ns	ns
Turn-Off Delay Time	td(off)			185	ns	ns
Turn-Off Fall Time	tf			95	ns	ns
Reverse Recovery Time	trr	IDS = 50 A, VGS = 0 V, dlSD/dt = 100 A/μs		66	nS	nS
Reverse Recovery Charge	Qrr			200	nC	nC

Package Dimensions (TOLL-8L)

Symbol	Dimensions (mm) MIN.	Dimensions (mm) NOM.	Dimensions (mm) MAX.	Symbol	Dimensions (mm) MIN.	Dimensions (mm) NOM.	Dimensions (mm) MAX.
A	2.200	2.300	2.400	b1	0.420	0.460	0.500
b1	9.700	9.800	9.900	b3	0.350
c	0.492	0.500	0.508	b4	0.600
D	10.280	10.380	10.480	b5	3.100
E	9.800	9.900	10.000	b6	1.200
e	1.200 BSC			D2	3.300
H	11.580	11.680	11.780	E1	7.800
H1	6.650	6.750	6.850	E4	8.800
H2	7.300			E5	9.200
H3	3.200			b	0.700	0.800	0.900
H4	3.800			L	1.700	1.900	2.100
K1	4.180			L1	0.700
K2	2.900			L2	0.600
				L4	1.050	1.150	1.250
				L5	0.500	0.600	0.700

Packaging Specifications

Package Type	Units/Reel	Reels/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Box Dimensions (mm)	Reel Dimensions
TOLL-8L	2,000	1	2,000	6	12,000	360×360×50	13”×24”

Soldering Profile (Pb-Free)

Temperature Profile for IR Reflow Soldering:

Preheating: 150~180, Time: 60~90 sec.
Peak Temp.: 245±5, Duration: 5±0.5 sec.
Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions:

Temp.: 260±5
Time: 10±1 sec.

2504101957_BLUE-ROCKET-BRCS019N10SHTL_C46962501.pdf

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