High Density Cell Design and Ultra Low On Resistance P Channel MOSFET BORN BMS2301 in SOT 323 Package
Key Attributes
Model Number:
BMS2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
1.4A
Operating Temperature -:
-
RDS(on):
210mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
82pF
Number:
1 P-Channel
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
640pF
Pd - Power Dissipation:
290mW
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
BMS2301
Package:
SOT-323
Product Description
Product Overview
The BMS2301 is a P-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is available in a SOT-323 surface mount package, offering efficient performance for various applications. Key electrical characteristics include a Drain-Source Breakdown Voltage of -20V and low on-state resistance values, such as 82m at VGS = -4.5V and ID = -1.0A.
Product Attributes
- Brand: Born
- Package Type: SOT-323
- Technology: Advanced trench process
- Cell Design: High Density Cell Design for Ultra Low On-Resistance
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings @TA=25 unless otherwise noted | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 8.0 | V | |||
| Continuous Drain Current | ID | -1.4 | A | |||
| Pulsed Drain Current | IDM | (tp=10s) | -3.0 | A | ||
| Power Dissipation | PD | 0.29 | W | |||
| Thermal Resistance from Junction to Ambient | R JA | 431 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -50 | +150 | |||
| Electrical Characteristics @TA=25 unless otherwise noted | ||||||
| Drain-Source Breakdown Voltage | VDSS | VGS = 0V, ID =-250A | -20 | V | ||
| Gate-Source Leakage | IGSS | VDS =0V, VGS =8V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =-20V, VGS =0V | -1.0 | A | ||
| Gate-Source Threshold Voltage | VGS(th) | VDS =VGS, ID =-250A | -0.45 | -0.7 | V | |
| Drain-Source On-State Resistance | RDS(on) | VGS =-4.5V, ID =-1.0A | 82 | 100 | m | |
| VGS =-2.5V, ID =-0.5A | 102 | 140 | m | |||
| VGS =-1.8V, ID =-0.3A | 143 | 210 | m | |||
| Charges and Capacitances (note 3) | ||||||
| Input Capacitance | Ciss | VDS =-8.0V,VGS =0V, f =1MHz | 640 | pF | ||
| Output Capacitance | Coss | 120 | pF | |||
| Reverse Transfer Capacitance | Crss | 82 | pF | |||
| Switching Characteristics (note 2,3) | ||||||
| Turn-On Delay Time | td(on) | VGS=-4.5V,VDD=-4.0V, ID =-1.0A,RG=6.2 | 6.2 | ns | ||
| Rise Time | tr | 15 | ns | |||
| Turn-Off Delay Time | td(off) | 26 | ns | |||
| Fall Time | tf | 18 | ns | |||
| Total Gate Charge | Qg | VDS=-10V,VGS=-4.5V, ID =-3.0A | 5.5 | 10 | nC | |
| VDS=-10V,VGS=-2.5V, ID =-3.0A | 3.3 | 6 | nC | |||
| Gate-Source Charge | Qgs | 0.7 | nC | |||
| Gate-Drain Charge | Qg | 1.3 | nC | |||
| Drain-source Body diode characteristics | ||||||
| Forward Diode Voltage | VSD | VGS =0V,IS=-0.3A | -0.62 | -1.2 | V | |
Package Information
| Model | Symbol | Dim (mm) | Min | Nor | Max |
|---|---|---|---|---|---|
| SOT-323 | A | 0.90 | 1.00 | 1.10 | |
| A1 | 0.00 | 0.05 | 0.10 | ||
| A2 | 0.90 | 0.95 | 1.00 | ||
| b | 0.20 | 0.30 | 0.40 | ||
| c | 0.08 | 0.12 | 0.15 | ||
| D | 2.00 | 2.10 | 2.20 | ||
| E | 2.15 | 2.30 | 2.45 | ||
| E1 | 1.15 | 1.25 | 1.35 | ||
| e | 0.650TPY. | ||||
| e1 | 1.2 | 1.3 | 1.4 | ||
| L | 0.26 | 0.36 | 0.46 | ||
| 0 | 4 | 8 |
Ordering Information
| Order Code | Package | Base Qty | Delivery Mode | Marking |
|---|---|---|---|---|
| BMS2301 | SOT-323 | 3K | Tape and reel | TS1 |
2410121615_BORN-BMS2301_C22380729.pdf
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