1200 Volt SiC N-Channel MOSFET Bruckewell CMS120N080B High Speed Switching Device for Power Conversion
Key Attributes
Model Number:
CMS120N080B
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
35A
RDS(on):
77mΩ@20V
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Pd - Power Dissipation:
188W
Gate Charge(Qg):
61nC
Mfr. Part #:
CMS120N080B
Package:
TO-263-7
Product Description
Product Overview
The Bruckewell CMS120N080B is a SiC N-Channel 1200-V (D-S) MOSFET designed for high-speed switching applications. It offers high blocking voltage and fast reverse recovery, contributing to low capacitance and high system efficiency. This MOSFET is suitable for easy paralleling and is ideal for demanding applications such as solar inverters, switch mode power supplies, UPS, induction heating and welding, EV charging stations, and high voltage DC/DC converters.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Product Type: SiC N-Channel MOSFET
- Voltage Rating: 1200 V
- Package Type: TO-263-7
- RoHS Compliant: Yes
- Publication Order Number: CMS120N080B
- Revision: Rev. A - 2023
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 1200 | V | |||
| VGS | Gate-Source Voltage | -5 | 20 | V | ||
| ID | Continuous Drain Current (TC =25C) | 35 | A | |||
| ID | Continuous Drain Current(TC =100C) | 25 | A | |||
| ID,pulse | Pulsed Drain Current | 80 | A | |||
| Ptot | Power Dissipation (TC =25C) | 188 | W | |||
| EAS | Single Pulse Avalanche Energy, IAS=20A ,V=50V, L =1mH | 200 | mJ | |||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | 175 | C | ||
| Thermal Resistance Ratings | ||||||
| RJA | Maximum Junction-to-Ambient | 40 | C/W | |||
| RJC | Maximum Junction-to-Case | 0.8 | C/W | |||
| Static Electrical Characteristics (TJ=25C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =10mA | 2.0 | 2.8 | 4.0 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =1mA | 1200 | - | - | V |
| IGSS+ | Gate-Source Leakage Current | VDS =0V, VGS =20V | - | 0.1 | 100 | nA |
| IGSS- | VDS =0V, VGS =-5V | - | - | -100 | nA | |
| IDSS | Drain-Source Leakage Current | VDS =1200V, VGS =0V | - | - | 1.0 | A |
| VDS =1200V, VGS =0V, TJ =175C | - | 1.0 | - | A | ||
| RDS (on) | Static Drain-Source On-Resistance | VGS =20V, ID =20A | - | 77 | 100 | m |
| VGS =20V, ID =10A | - | 71 | 90 | m | ||
| VGS =20V, ID =20A, TJ =125C | - | 106 | - | m | ||
| VGS =20V, ID =20A, TJ =175C | - | 134 | - | m | ||
| Rg | Gate Input Resistance | f =1MHz,VAC =25mV, D-S short | - | 3.0 | - | |
| AC Electrical Characteristics (TJ=25C unless otherwise specified) | ||||||
| Qg | Total Gate Charge | VDD=800 V, IDS=20 A, VGS=-5/20V | - | 61 | - | nC |
| Qgs | Gate-Source Charge | - | 24 | - | nC | |
| Qgd | Gate-Drain Charge | - | 14 | - | nC | |
| td(on) | Turn-On Delay Time | VDD=800 V, IDS=20 A, RG(ext)=2.5 , VGS=-5/+20 V, L=975 H | - | 9 | - | ns |
| tr | Rise Time | - | 4 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 15 | - | ns | |
| tf | Fall Time | - | 10 | - | ns | |
| CISS | Input Capacitance | VGS=0 V, VDS=1000 V, f=200 kHz, VAC=25mV | - | 1377 | - | pF |
| COSS | Output Capacitance | - | 62 | - | pF | |
| CRSS | Reverse Transfer Capacitance | - | 4 | - | pF | |
| Eoss | Coss Stored Energy | - | 38 | - | J | |
| Eon | Turn-On Switching Energy | VDD=800 V, IDS=20 A, RG(ext)=2.5 , VGS=-5/+20 V, L=975 H | - | 208 | - | J |
| Eoff | Turn-Off Switching Energy | - | 25 | - | J | |
| Etot | Total Switching Energy | - | 233 | - | J | |
| Body Diode Characteristics (TJ=25C unless otherwise specified) | ||||||
| IS | Max Continuous Diode Forward Current | VGS=-5 V, TC=25 C | - | - | 43 | A |
| VSD | Diode Forward Voltage | VGS=-5 V, IS=10 A | - | 3.8 | - | V |
| trr | Reverse Recovery Time | IS=20 A, VR=800 V, VGS=-5 V, di/dt=8 A/s | - | 8 | - | ns |
| Qrr | Reverse Recovery Charge | - | 130 | - | nC | |
| Irrm | Peak Reverse Recovery Current | - | 29 | - | A | |
2410121810_Bruckewell-CMS120N080B_C29781281.pdf
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