N Channel 100 Volt MOSFET Bruckewell MSO100N019 featuring low RDS ON and gate charge for synchronous buck
Key Attributes
Model Number:
MSO100N019
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
330A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
386pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
333W
Input Capacitance(Ciss):
13.362nF@50V
Gate Charge(Qg):
212nC@10V
Mfr. Part #:
MSO100N019
Package:
TOLL
Product Description
Product Overview
The MSO100N019 is a high-performance N-Channel 100-V (D-S) MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key benefits include super low gate charge and excellent Cdv/dt effect decline.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Product Line: MSO Series
- Certifications: RoHS Compliant, Green Device Available
- Package Type: TOLL
- Packing: 2,000/Reel
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current1 | (TC =25°C) | 330 | A | ||
| (TC =100°C) | 225 | A | ||||
| IDM | Pulsed Drain Current1,2 | 1000 | A | |||
| IAS | Single Pulse Avalanche Current, L =1.0mH3 | 40 | A | |||
| EAS | Single Pulse Avalanche Energy, L =1.0mH3 | 800 | mJ | |||
| PD | Power Dissipation4 (TC =25°C) | 333 | W | |||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | +175 | °C | ||
| Thermal Resistance Ratings | ||||||
| RθJA | Maximum Junction-to-Ambient1 | 40 | °C/W | |||
| RθJC | Maximum Junction-to-Case1 | 0.45 | °C/W | |||
| Electrical Characteristics (TJ=25°C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =250μA | 2.0 | - | 4.0 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =250μA | 100 | - | - | V |
| gfs | Forward Transconductance | VDS =5V, ID =20A | - | 75 | - | S |
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =±20V | - | - | ±100 | nA |
| IDSS | Drain-Source Leakage Current | VDS =80V, VGS =0V, TJ =25°C | - | - | 1 | μA |
| VDS =80V, VGS =0V, TJ =100°C | - | - | 100 | μA | ||
| RDS (on) | Static Drain-Source On-Resistance2 | VGS =10V, ID =90A | - | 1.6 | 1.9 | mΩ |
| EAS | Single Pulse Avalanche Energy5 | VDD =50V, L =1mH, IAS =30A | 450 | - | - | mJ |
| VSD | Diode Forward Voltage2 | IS =1A, VGS =0V, TJ =25°C | - | - | 1.2 | V |
| IS | Continuous Source Current1,6 | VG=VD=0V, Force Current | - | - | 100 | A |
| Dynamic Characteristics | ||||||
| Qg | Total Gate Charge2 | VDS =50V ID =90A VGS =10V | -- | 212 | -- | nC |
| Qgs | Gate-Source Charge | -- | 59 | -- | ||
| Qgd | Gate-Drain (Miller) Charge | -- | 53 | -- | ||
| td(on) | Turn-On Delay Time2 | VDS =50V ID =20A VGS =10V RG =3Ω | -- | 47 | -- | ns |
| tr | Rise Time | -- | 28 | -- | ||
| td(off) | Turn-Off Delay Time | -- | 79 | -- | ||
| tf | Fall Time | -- | 18 | -- | ||
| CISS | Input Capacitance | VDS =50V VGS =0V f =1.0MHz | -- | 13362 | -- | pF |
| COSS | Output Capacitance | -- | 1917 | -- | ||
| CRSS | Reverse Transfer Capacitance | -- | 386 | -- | ||
| Rg | Gate Resistance | VGS =VDS =0V, f =1.0MHz | -- | 1.0 | -- | Ω |
Notes:
1. Data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. Data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%.
3. EAS data shows maximum rating. Test condition: VDD=50V, VGS=10V, L=1.0mH, IAS=40A.
4. Power dissipation is limited by 175°C junction temperature.
5. Min. value is 100% EAS tested guarantee.
6. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
2412061551_Bruckewell-MSO100N019_C42407747.pdf
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