SOP 8 Package Dual N Channel MOSFET Bruckewell MSQ100N03D Suitable for Networking Load Switch and LED Applications
Key Attributes
Model Number:
MSQ100N03D
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
158mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF@25V
Input Capacitance(Ciss):
1.021nF@25V
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
MSQ100N03D
Package:
SOP-8
Product Description
Product Overview
The MSQ100N03D is a high-performance dual N-channel MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. It is suitable for networking, load switch, and LED applications.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Product Type: Dual N-Channel MOSFET
- Package Type: SOP-8
- Certifications: RoHS Compliant, Green Device Available
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current (TA =25°C) | 2.3 | A | |||
| ID | Continuous Drain Current (TA =70°C) | 2.1 | A | |||
| IDM | Pulsed Drain Current | 13.2 | A | |||
| IAS | Single Pulse Avalanche Current (L =0.1mH) | 5 | A | |||
| EAS | Single Pulse Avalanche Energy (L =0.1mH) | 1.3 | mJ | |||
| PD | Power Dissipation (TA =25°C) | 2.5 | W | |||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | +150 | °C | ||
| RθJA | Maximum Junction-to-Ambient (t ≤10s) | 50 | °C/W | |||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =250µA | 1.0 | 1.7 | 2.5 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =250µA | 100 | - | - | V |
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =±20V | - | - | ±100 | nA |
| IDSS | Drain-Source Leakage Current | VDS =80V, VGS =0V | - | - | 1 | µA |
| RDS (on) | Static Drain-Source On-Resistance | VGS =10V, ID =2.0A | - | 130 | 152 | mΩ |
| RDS (on) | Static Drain-Source On-Resistance | VGS =4.5V, ID =1.0A | - | 135 | 158 | mΩ |
| Qg | Total Gate Charge | VDS =60V ID =2.7A VGS =10V | - | 19 | - | nC |
| CISS | Input Capacitance | VDS =25V VGS =0V f =1.0MHz | - | 1021 | - | pF |
| COSS | Output Capacitance | - | 38 | - | pF | |
| CRSS | Reverse Transfer Capacitance | - | 17 | - | pF | |
| td(on) | Turn-On Delay Time | VDS =50V VGS =10V RG =6Ω RL =18.5Ω | - | 6.1 | - | ns |
| tr | Rise Time | - | 27 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 28 | - | ns | |
| tf | Fall Time | - | 11 | - | ns |
Package Dimensions (SOP-8)
| REF | Millimeter (Min.) | Millimeter (Max.) |
|---|---|---|
| A | 5.80 | 6.20 |
| B | 4.80 | 5.00 |
| C | 3.80 | 4.00 |
| D | 0° | 8° |
| E | 0.40 | 0.90 |
| F | 0.19 | 0.26 |
| G | 1.27 | Typ. |
| H | 0.35 | 0.51 |
| J | 0.40 | Ref. |
| K | 45° | Ref. |
| L | 1.35 | 1.75 |
| M | 0.10 | 0.25 |
Packing & Order Information
- Packing: 3,000/Reel
- Marking: MSQ100N03D
2410121707_Bruckewell-MSQ100N03D_C22465532.pdf
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