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quality SOT23 Package NPN Silicon Epitaxial Transistor CBI BC848B for in Switching and Amplifier Circuits factory
quality SOT23 Package NPN Silicon Epitaxial Transistor CBI BC848B for in Switching and Amplifier Circuits factory

SOT23 Package NPN Silicon Epitaxial Transistor CBI BC848B for in Switching and Amplifier Circuits

Key Attributes
Model Number: BC848B
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-
Mfr. Part #:
BC848B
Package:
SOT-23
Product Description

Product Overview

The BC846...BC850 series are NPN silicon epitaxial transistors designed for switching and amplifier applications. For complementary PNP types, the BC856...BC860 series is recommended. These transistors are housed in a SOT-23 plastic package.

Product Attributes

  • Package Type: SOT-23 Plastic Package
  • Transistor Type: NPN Silicon Epitaxial
  • Complementary Type: PNP transistors BC856...BC860

Technical Specifications

Parameter Symbol BC846 BC847, BC850 BC848, BC849 Units Min. Typ. Max.
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage VCBO 80 50 30 V
Collector Emitter Voltage VCEO 65 45 30 V
Emitter Base Voltage VEBO 6 5 V
Collector Current IC 100 mA
Peak Collector Current ICM 200 mA
Power Dissipation Ptot 200 mW
Junction Temperature TJ 150 C
Storage Temperature Range TS -65 to +150 C
Characteristics (Tamb = 25 C)
DC Current Gain at VCE = 5 V, IC = 2 mA hFE 110 220 -
DC Current Gain at VCE = 5 V, IC = 2 mA hFE 200 450 -
DC Current Gain at VCE = 5 V, IC = 2 mA hFE 420 800 -
Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA VCEsat 250 mV
Collector Emitter Saturation Voltage at IC = 100 mA, IB = 5 mA VCEsat 600 mV
Base Emitter On Voltage at IC = 2 mA, VCE = 5 V VBE(on) 580 mV
Base Emitter On Voltage at IC = 10 mA, VCE = 5 V VBE(on) 700 mV
Base Emitter On Voltage at IC = 10 mA, VCE = 5 V VBE(on) 720 mV
Collector Cutoff Current at VCB = 30 V ICBO 15 nA
Current Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz fT 300 MHz
Output Capacitance at VCB = 10 V, f = 1 MHz Cob 6 pF
Input Capacitance at VEB = 0.5 V, f = 1 MHz Cib 9 pF
Noise Figure at IC = 200 A, VCE = 5 V, RG = 2 K, f = 1 KHz NF 10 4 dB
Noise Figure at IC = 200 A, VCE = 5 V, RG = 2 K, f = 1 KHz NF 4 dB
Noise Figure at IC = 200 A, VCE = 5 V, RG = 2 K, f = 1 KHz NF 3 dB

2410121234_CBI-BC848B_C2919761.pdf

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