20V Dual N Channel Enhancement MOSFET BORN BM8205 Low On Resistance for Power Switching Applications
Key Attributes
Model Number:
BM8205
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
35mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
140pF
Number:
2 N-Channel
Output Capacitance(Coss):
330pF
Input Capacitance(Ciss):
600pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
BM8205
Package:
SOT-23-6L
Product Description
Product Overview
The BM8205 is a 20V Dual N-Channel Enhancement MOSFET designed for power switching applications. It features very low on-resistance (RDS(ON)) due to its high-density cell design, making it suitable for PWM applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is characterized by its fully characterized avalanche voltage and current and comes in a SOT23-6L surface mount package.
Product Attributes
- Brand: BM
- Model: BM8205
- Package Type: SOT23-6L
- Channel Type: Dual N-Channel Enhancement MOSFET
- Origin: Taiwan (indicated by www.born-tw.com)
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings @TA=25 unless otherwise noted | ||||||
| Drain-source voltage | VDS | 20 | V | |||
| Gate-source voltage | VGS | 12 | V | |||
| Continuous drain current (TJ = 150 C) a | ID | TA=25C | 4.0 | A | ||
| Continuous drain current (TJ = 150 C) a | ID | TA=70C | 3.0 | A | ||
| Pulsed drain current b | IDM | 20 | A | |||
| Continuous source current (diode conduction) a | IS | 1.2 | A | |||
| Power dissipation a | PD | TA=25C | 1.4 | W | ||
| Power dissipation a | PD | TA=70C | 0.9 | W | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 150 | |||
| N-Channel Electrical Characteristics @TA=25 unless otherwise noted | ||||||
| Drain-source breakdown voltage | BVDSS | VGS=0V, ID=250A | 20 | - | - | V |
| Zero gate voltage drain current | IDSS | VDS=20V, VGS=0V | - | - | 1 | A |
| Gate-body leakage | IGSS | VDS=0V, VGS=12V | - | - | 100 | nA |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 0.5 | 0.75 | 1.2 | V |
| Drain-source on-state resistance a | RDS(ON) | VGS=4.5V, ID=4.0A | - | 22 | 26 | m |
| Drain-source on-state resistance a | RDS(ON) | VGS=2.5V, ID=3.0A | - | 28 | 35 | m |
| Forward transconductance a | gfs | VDS=5V, ID=4A | - | 10 | - | S |
| Dynamic Characteristics b | ||||||
| Input capacitance | CISS | VDS=10V ,VGS=0V f=1.0MHz | - | 600 | - | pF |
| Output capacitance | COSS | - | 330 | - | pF | |
| Reverse transfer capacitance | CRSS | - | 140 | - | pF | |
| Switching Characteristics | ||||||
| Turn-on delay time | tD(ON) | VDD=10V RL=3 ohm VGEN=4.5V RGEN=6ohm | - | 18 | - | ns |
| Rise time | tr | - | 5 | - | ns | |
| Turn-off delay time | tD(OFF) | - | 43 | - | ns | |
| Fall time | tf | - | 20 | - | ns | |
| Total gate charge | Qg | VDS=10V ID=4A VGS=4.5V | - | 11 | - | nC |
| Gate-source charge | Qgs | - | 2.3 | - | nC | |
| Gate-drain charge | Qg | - | 2.5 | - | nC | |
| DRAIN-SOURCE DIODE CHARACTERISTICS | ||||||
| Diode forward voltage | VSD | VGS=0V,Is=2A | - | 0.76 | 1.16 | V |
| THERMAL CHARACTERISTICS | ||||||
| Maximum junction-to-ambient a | RJA | 10 s Steady-State | 70 | - | 90 | /W |
| Maximum junction-to-ambient a | RJA | 100 Steady-State | 100 | - | 125 | /W |
| Maximum junction-to-foot Steady-State | RJC | 63 | - | 80 | /W | |
Ordering Information
| Order Code | Package | Base Qty | Delivery Mode | Marking |
|---|---|---|---|---|
| BM8205 | SOT23-6L | 3K | Tape and reel | 8205 |
2410121930_BORN-BM8205_C20612283.pdf
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