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quality Low RDS ON P Channel MOSFET BORN BMI06P331 with split gate trench technology and excellent stability factory
quality Low RDS ON P Channel MOSFET BORN BMI06P331 with split gate trench technology and excellent stability factory

Low RDS ON P Channel MOSFET BORN BMI06P331 with split gate trench technology and excellent stability

Key Attributes
Model Number: BMI06P331
Product Custom Attributes
Mfr. Part #:
BMI06P331
Package:
TO-252-2
Product Description

Product Overview

The BMI06P331 is a P-Channel MOSFET designed with split gate trench MOSFET technology. It offers low RDS(ON) and FOM, along with extremely low switching loss and excellent stability and uniformity. This MOSFET is suitable for power management and portable equipment applications.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
Features
Drain-Source Voltage VDS -60 V
Drain Current ID -35 A
RDS(ON)@VGS=-10V 25 33 m
RDS(ON)@VGS=-4.5V 32 40 m
Description
Technology Split gate trench MOSFET
Application
Power management
Portable equipment
Absolute Maximum Ratings (TA=25C unless otherwise specified)
Drain-Source Voltage VDS -60 V
Gate - Source Voltage VGS 20 V
Drain Current ID TC=25C -35 A
Drain Current ID TC=100C -25 A
Drain Current-Pulse IDM -140 A
Single Pulsed Avalanche Energy EAS 225 mJ
Power Dissipation PD TC=25C 92 W
Power Dissipation PD TC=100C 48 W
Thermal Resistance from Junction to Ambient RJA(3) 60 C/W
Thermal Resistance From Junction to Case RJC 1.35 C/W
Junction Temperature TJ -55 +150 C
Storage Temperature Range Tstg -55 +150 C
Electrical Characteristics (TA=25C unless otherwise noted)
Off Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID=-250uA -60 V
Zero Gate Voltage Drain Current IDSS VDS = -48V, VGS=0V -1 uA
Gate-Body Leakage Current IGSS VGS = 20V, VDS=0V 100 nA
On Characteristics
Gate Threshold Voltage VGS(TH) VGS = VDS, ID=-250uA -1.0 -2.0 -3.0 V
Static Drain-source On Resistance RDS(ON) VGS=-10V, ID=-15A 25 33 m
Static Drain-source On Resistance RDS(ON) VGS=-4.5V, ID=-10A 32 40 m
Dynamic Characteristics
Input capacitance Ciss VDS =-30V, VGS =0V, f = 1MHz 3050 pF
Output capacitance Coss 170 pF
Reverse transfer capacitance Crss 145 pF
Switching Characteristics
Turn-on delay time Td(on) VDD=-30V, VGS=-10V, RG =3, RL =1.5 13 ns
Turn-on Rise time Tr 17 ns
Turn -Off Delay Time Td(off) 52 ns
Turn -Off Fall time Tf 20 ns
Gate to Drain Charge Qg VDS=-30V, VGS=-10V ID=-10A 43 nC
Gate to Source Charge Qgs 5.3 nC
Gate to Drain Charge Qgd 8.8 nC
Drain-Source Diode Characteristics
Diode Forward Voltage VSD VGS=0V,IS=-15A -1.2 V
Continuous Source Current IS -35 A
Package Information
Package Type TO-252-2
Tape TO-252-2

2511241925_BORN-BMI06P331_C52993703.pdf

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