power management P Channel MOSFET BORN SI2301 featuring high density cell design and SOT 23 package
Key Attributes
Model Number:
SI2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
110mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
87pF
Number:
1 P-Channel
Output Capacitance(Coss):
223pF
Input Capacitance(Ciss):
415pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
SI2301
Package:
SOT-23
Product Description
Product Overview
The SI2301-P is a P-Channel MOSFET utilizing advanced trench process technology and high-density cell design for ultra-low on-resistance. This RoHS-compliant SOT-23 package component is designed for efficient power management applications.
Product Attributes
- Brand: BORN
- Technology: Advanced Trench Process
- Cell Design: High Density Cell Design
- Type: P-Channel MOSFET
- Package: SOT-23
- Compliance: ROHS
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | TA = 25 | -3 | A | ||
| Pulsed Drain Current | IDM | -10 | A | |||
| Maximum Power Dissipation | PD | TA = 25 | 1.25 | W | ||
| Maximum Power Dissipation | PD | TA = 75 | 0.8 | W | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | |||
| Junction-to-Ambient Thermal Resistance (PCB mounted) | RthJA | Surface Mounted on FR4 Board | 100 | /W | ||
| Junction-to-Ambient Thermal Resistance (PCB mounted) | RthJA | Surface Mounted on FR4 Board, t 5 sec | 166 | /W | ||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = -250uA | -20 | V | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -4.5V, ID = -3.0A | 0.4 | m | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -2.5V, ID = -2.0A | 0.8 | m | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -4.5V, ID = -3.0A | 110 | m | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -2.5V, ID = -2.0A | 140 | m | ||
| Gate Threshold Voltage | VGS(th) | VDS =VGS, ID = -250uA | -1.6 | -1 | -0.4 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = -20V, V GS = 0V | -1 | uA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -16V, V GS = 0V, TJ=55 oC | -10 | uA | ||
| Gate Body Leakage | IGSS | VGS = 10V, VDS = 0V | 100 | nA | ||
| Forward Transconductance | gfs | VDS = -5V, ID = -2.8A | 6.5 | S | ||
| Total Gate Charge | Qg | VDS = -6V, ID -2.3A, VGS = -4.5V | 5.8 | nC | ||
| Gate-Source Charge | Qgs | 10 | nC | |||
| Gate-Drain Charge | Qgd | 0.85 | nC | |||
| Turn-On Delay Time | td(on) | VDD = -6V, RL=6, ID -1.A, VGEN = -4.5V, RG = 6 | 13 | ns | ||
| Turn-On Rise Time | tr | 25 | ns | |||
| Turn-Off Delay Time | td(off) | 36 | ns | |||
| Turn-Off Fall Time | tf | 60 | ns | |||
| Turn-On Delay Time | td(on) | VDD = -6V, RL=6, ID -1.A, VGEN = -4.5V, RG = 6 | 34 | ns | ||
| Turn-On Rise Time | tr | 60 | ns | |||
| Turn-Off Delay Time | td(off) | 42 | ns | |||
| Turn-Off Fall Time | tf | 70 | ns | |||
| Input Capacitance | Ciss | VDS = -6V, VGS = 0V, f = 1.0 MHz | 415 | pF | ||
| Output Capacitance | Coss | 223 | pF | |||
| Reverse Transfer Capacitance | Crss | 87 | pF | |||
| Max. Diode Forward Current | IS | -1.6 | A | |||
| Diode Forward Voltage | VSD | IS = -1.0A, VGS = 0V | -0.8 | V |
SOT-23 PACKAGE OUTLINE
Plastic surface mounted package SOT-23 (UNIT)mm
2410121447_BORN-SI2301_C306861.pdf
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