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quality General purpose PNP transistor CBI SS8550 in SOT23 plastic surface mounted package with 3 leads factory
quality General purpose PNP transistor CBI SS8550 in SOT23 plastic surface mounted package with 3 leads factory

General purpose PNP transistor CBI SS8550 in SOT23 plastic surface mounted package with 3 leads

Key Attributes
Model Number: SS8550
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
SS8550
Package:
SOT-23-3L
Product Description

Product Overview

The SS8550 is a PNP transistor, complementary to the SS8050. It is designed for general-purpose applications and is housed in a SOT-23 plastic surface-mounted package with 3 leads. The marking for this transistor is 'Y2'.

Product Attributes

  • Type: PNP Transistor
  • Marking: Y2
  • Package: SOT-23
  • Package Type: Plastic surface mounted package; 3 leads
  • Complementary to: SS8050

Technical Specifications

Parameter Symbol Test Conditions Min Max Units
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VEBO -5 V
Collector Current - Continuous IC -1.5 A
Collector Power Dissipation PC 0.3 W
Junction Temperature Tj 150
Storage Temperature Tstg -55 150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 A
Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 A
Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 A
DC current gain hFE(1) VCE=-1V, IC=-100mA 200 350
DC current gain hFE(2) VCE=-1V, IC=-800mA 40
Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V
Base-emitter on voltage VBE(on) IC=-1V, VCE=-10mA -1 V
Base-emitter positive favor voltage VBEF IB=-1A -1.55 V
Transition frequency fT VCE= -10V, IC= -50mA, f=30MHz 100 MHz
Output capacitance Cob VCB=-10V,IE=0,f=1MHz 20 pF

2410311341_CBI-SS8550_C5366417.pdf

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