Power BORN SI2300 N Channel MOSFET featuring super high dense cell design and compact SOT 23 package

Key Attributes
Model Number: SI2300
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
33pF
Input Capacitance(Ciss):
340pF
Output Capacitance(Coss):
115pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
5.4nC@10V
Mfr. Part #:
SI2300
Package:
SOT-23
Product Description

Product Overview

The SI2300 is an N-Channel MOSFET from BORN SEMICONDUCTOR, INC. It features a super high dense cell design for extremely low RDS(ON), offering reliable and rugged performance. This MOSFET is available in a SOT-23 surface mount package, making it suitable for various electronic applications requiring efficient power management.

Product Attributes

  • Brand: BORN SEMICONDUCTOR, INC.
  • Product Name: SI2300
  • Technology: N-Channel MOSFET
  • Package Type: SOT-23 (Surface Mount)
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified

Technical Specifications

Parameter Condition Min. Typ. Max. Unit
Features
VDS 20 V
ID 3.6 A
RDS(ON) VGS=4.5V 30 m
RDS(ON) VGS=2.5V 35 m
Absolute Maximum Ratings
VDS (@TA=25C unless otherwise noted) 20 V
VGS (@TA=25C unless otherwise noted) 12 V
ID (@TA=25C unless otherwise noted) 3.6 A
IDM Pulsed Drain Current (1) 8 A
PD Maximum Power Dissipation TA = 25C 1.25 W
PD Maximum Power Dissipation TA = 75C 0.8 W
TJ,Tstg Operating Junction and Storage Temperature Range -55 150 C
RJA Junction-to-Ambient Thermal Resistance (PCB mounted) (2) 78 C/W
Electrical Characteristics
BVDS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250uA) 20 V
RDS(on) Drain-Source On-State Resistance (VGS = 2.5V, ID = 3.1A) 35.0 60.0 m
RDS(on) Drain-Source On-State Resistance (VGS = 4.5V, ID = 3.6A) 30.0 55.0 m
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 250uA) 0.4 0.65 1.5 V
IDSS Zero Gate Voltage Drain Current (VDS = 20V, VGS = 0V) 1 uA
IGSS Gate Body Leakage (VGS = 12V, VDS = 0V) 100 nA
gfs Forward Transconductance (VDS = 5V, ID = 4.2A) 5 S
Dynamic Characteristics
Qg Total Gate Charge (VDS = 10V, ID = 3.6A, VGS = 4.5V) 5.4 nC
Qgs Gate-Source Charge (VDS = 10V, ID = 3.6A, VGS = 4.5V) 0.65 nC
Qgd Gate-Drain Charge (VDS = 10V, ID = 3.6A, VGS = 4.5V) 1.5 nC
td(on) Turn-On Delay Time (VDD = 10V, RG = 6, ID = 1A, VGS = 4.5V, RL = 5.5) 12 ns
tr Turn-On Rise Time (VDD = 10V, RG = 6, ID = 1A, VGS = 4.5V, RL = 5.5) 36 ns
td(off) Turn-Off Delay Time (VDD = 10V, RG = 6, ID = 1A, VGS = 4.5V, RL = 5.5) 34 ns
tf Turn-Off Fall Time (VDD = 10V, RG = 6, ID = 1A, VGS = 4.5V, RL = 5.5) 10 ns
Ciss Input Capacitance (VDS = 10V, VGS = 0V, f = 1.0MHz) 340 pF
Coss Output Capacitance (VDS = 10V, VGS = 0V, f = 1.0MHz) 115 pF
Crss Reverse Transfer Capacitance (VDS = 10V, VGS = 0V, f = 1.0MHz) 33 pF
Source-Drain Diode
IS Max. Diode Forward Current 1.6 A
VSD Diode Forward Voltage (IS = 1.0A, VGS = 0V) 1.0 V

Ordering Information:

Order Code Package Marking Base Qty Delivery Mode
SI2300 SOT-23 A006 3K Tape and reel

Package Marking: SI2300

Outline Drawing - SOT-23 Packaging:

SYMBOL MILLIMETER
A0.90 - 1.10
A10.01 - 0.10
A20.50 - 0.70
D2.80 - 3.00
b0.25 - 0.45
E2.10 - 2.50
E11.20 - 1.40
e1.80 - 2.00
L0.25 - 0.45
0 - 8

Packaging Tape - SOT-23:

SYMBOL MILLIMETER
A02.100.10
A13.100.10
B00.650.10
B12.750.10
d01.550.10
d11.000.05
E1.750.10
F3.500.10
K01.100.10
P4.000.10
P04.000.10
P12.000.10
W8.000.30
T0.20 0.05

Packaging Reel:

SYMBOL MILLIMETER Quantity
A177.80.23000PCS
B3.1
C13.50
D9.60.3
E750.2
F12.30.3
T11.00.2

Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information.


2504231555_BORN-SI2300_C48533913.pdf

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