P Channel Trench Technology Power MOSFET BORN BM3139KT with Low RDS ON and ESD Protection Features

Key Attributes
Model Number: BM3139KT
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
500mA
RDS(on):
1.7Ω@1.8V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 P-Channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
170pF
Pd - Power Dissipation:
200mW
Mfr. Part #:
BM3139KT
Package:
SOT-523
Product Description

Product Overview

The BM3139KT is a -20V P-Channel Trench Technology Power MOSFET from BORN SEMICONDUCTOR, INC. Designed for efficiency, it features low RDS(ON) and low gate charge, making it suitable for load switching, low current inverters, and low current DC/DC converters. This MOSFET offers ESD protection and is available in a SOT-523 package.

Product Attributes

  • Brand: BORN SEMICONDUCTOR, INC.
  • Product Code: BM3139KT
  • Technology: Trench Technology Power MOSFET
  • Channel Type: P-Channel
  • Package: SOT-523
  • ESD Protected: Yes

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Features
VDS Drain-Source Voltage -20 V
ID Continuous Drain Current -0.5 A
RDS(ON) Drain-Source On-State Resistance VGS=-4.5V, ID=-0.5A 530 790 m
RDS(ON) Drain-Source On-State Resistance VGS=-2.5V, ID=-0.3A 750 1000 m
RDS(ON) Drain-Source On-State Resistance VGS=-1.8V, ID=-0.2A 1100 1700 m
Absolute Maximum Ratings (@TA=25C unless otherwise noted)
VDS Drain-Source Voltage -20 V
VGS Gate-Source Voltage 12 V
ID Continuous Drain Current(1,5) TA = 25C -0.5 A
PD Maximum Power Dissipation(4,5) TA = 25C 0.2 W
RJA Junction-to-Ambient Thermal Resistance (5) 883 C/W
TJ Junction Temperature Range 150 C
Tstg Storage Temperature Range -55 +150 C
Electrical Characteristics (@TJ=25C unless otherwise noted)
BVDS Drain-Source Breakdown Voltage VGS = 0V, ID =-250uA -20 -24 V
IDSS Zero Gate Voltage Drain Current VDS = -20V, VGS = 0V -0.3 uA
IGSS Gate Body Leakage VGS = 10V, VDS = 0V 2 10 uA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250uA -0.35 -0.62 -1.2 V
RDS(on) Drain-Source On-State Resistance VGS = -4.5V, ID = -0.5A 530 790 m
RDS(on) Drain-Source On-State Resistance VGS = -2.5V, ID = -0.3A 750 1000 V
RDS(on) Drain-Source On-State Resistance VGS = -1.8V, ID = -0.2A 1100 1700 m
Ciss Input Capacitance VDS = -16V, VGS = 0V, f = 1.0MHz 113 170 pF
Coss Output Capacitance VDS = -16V, VGS = 0V, f = 1.0MHz 15 25 pF
Crss Reverse Transfer Capacitance VDS = -16V, VGS = 0V, f = 1.0MHz 9 15 pF
td(on) Turn-On Delay Time VDS = -10V, ID = -200mA, VGS = -4.5V, RG = 10 9 ns
tr Turn-On Rise Time VDS = -10V, ID = -200mA, VGS = -4.5V, RG = 10 5.8 ns
td(off) Turn-Off Delay Time VDS = -10V, ID = -200mA, VGS = -4.5V, RG = 10 32.7 ns
tf Turn-Off Fall Time VDS = -10V, ID = -200mA, VGS = -4.5V, RG = 10 20.3 ns
VSD Diode Forward Voltage (3) IS = -0.5A, VGS = 0V -1.2 V
Ordering Information
Order Code Package Marking Base qty Delivery mode
BM3139KT SOT-523 39K 3K Tape and reel
Outline Drawing SOT-523
SYMBOL MIN TYP MAX
A 0.70 0.80 0.90
A1 0.00 0.05 0.10
A2 0.70 0.75 0.80
b1 0.15 0.22 0.29
b2 0.25 0.32 0.39
D 1.50 1.60 1.70
E 1.45 1.60 1.75
E1 0.70 0.80 0.90
e 0.50(TYP.)
e1 0.90 1.00 1.10
L 0.26 0.36 0.46
L1 0.40(REF)
0 4 8
Packaging Tape - SOT-523
SYMBOL MILLIMETER
A0 1.780.05
B0 1.780.05
d0 1.50+0.10
d1 0.500.10
E 1.750.10
F 3.500.05
K0 0.690.05
P0 4.000.10
P1 4.000.10
P2 2.000.10
W 8.000.20
T 0.200.02
Packaging Reel
SYMBOL MILLIMETER
A 177.80.2
B 2.70.2
C 13.50.2
D 9.60.3
E 54.50.2
F 12.30.3
T1 1.00.2
Quantity 3000PCS

2410010333_BORN-BM3139KT_C22380727.pdf

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