NPN Plastic Encapsulated Transistor CBI 2SC2383Y with 160V Collector Emitter Voltage and 1A Current Capacity

Key Attributes
Model Number: 2SC2383Y
Product Custom Attributes
Current - Collector Cutoff:
1uA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
20MHz
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
160V
Mfr. Part #:
2SC2383Y
Package:
SOT-89
Product Description

Product Overview

This NPN plastic-encapsulated transistor offers high voltage capability with a VCEO of 160V and a large continuous collector current capacity. It is designed for applications requiring robust performance in terms of voltage and current handling.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Product Type: Plastic-Encapsulate Transistors (NPN)
  • Marking: 2383

Technical Specifications

Symbol Parameter Test Conditions Value Unit
MAXIMUM RATINGS (TA=25 unless otherwise noted)
VCBO Collector-Base Voltage 160 V
VCEO Collector-Emitter Voltage 160 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 1 A
PC Collector Power Dissipation 0.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -55~+150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
V(BR)CBO Collector-base breakdown voltage IC= 100A , IE=0 160 V
V(BR)CEO * Collector-emitter breakdown voltage IC= 10mA, IB=0 160 V
V(BR)EBO Emitter-base breakdown voltage IE= 10A, IC=0 6 V
ICBO Collector cut-off current VCB=150V, IE=0 1 A
IEBO Emitter cut-off current VEB=6V, IC=0 1 A
hFE DC current gain VCE=5V, IC=200mA 100 - 320
VCE(sat) Collector-emitter saturation voltage IC=500mA, IB=50mA 1 V
VBE Base-emitter voltage IC=5mA, VCE= 5V 0.45 - 0.75 V
fT Transition frequency VCE=5V, IC=200mA 20 MHz
Cob Collector output capacitance VCB=10V,IE=0,f=1MHz 20 pF
*pulse test
Rank Range
O 100-200
Y 160-320

2508261745_CBI-2SC2383Y_C5362138.pdf

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