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quality power management solution featuring Bruckewell MSH40N01 N Channel MOSFET with trench DMOS technology factory
quality power management solution featuring Bruckewell MSH40N01 N Channel MOSFET with trench DMOS technology factory

power management solution featuring Bruckewell MSH40N01 N Channel MOSFET with trench DMOS technology

Key Attributes
Model Number: MSH40N01
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
180A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.7mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.119nF@10V
Number:
1 N-channel
Pd - Power Dissipation:
98W
Input Capacitance(Ciss):
3.972nF@10V
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
MSH40N01
Package:
PDFN5x6-8
Product Description

Product Overview

The MSH40N01 is an N-Channel MOSFET utilizing advanced trench DMOS technology, specifically engineered to minimize RDS(ON) and deliver superior switching performance. This device is designed to withstand high energy pulses in avalanche and commutation modes, making it ideal for high efficiency fast switching applications. It meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approved. Available with AEC-Q101 qualification, it is well-suited for power management in desktop computers, high-frequency switching, and synchronous rectifier applications.

Product Attributes

  • Brand: Bruckewell Technology Corporation
  • Technology: Trench DMOS
  • Compliance: RoHS, Green Product
  • Testing: 100% EAS Guaranteed, Full Function Reliability Approved
  • Qualifications: AEC-Q101 Qualification Available
  • Package Type: PDFN 5X6
  • Packing: 3,000/Reel

Technical Specifications

Symbol Parameter Test Conditions Min. Typ. Max. Units
Maximum Ratings
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage ±20 V
ID Continuous Drain Current (TC =25°C) 180 A
ID Continuous Drain Current (TC =100°C) 125 A
IDM Pulsed Drain Current 700 A
IAS Single Pulse Avalanche Current (L =0.1mH) 80 A
EAS Single Pulse Avalanche Energy (L =0.1mH) 320 mJ
PD Power Dissipation (TC =25°C) 98 W
TJ/TSTG Operating Junction and Storage Temperature -55 150 °C
Thermal Resistance Ratings
RθJA Maximum Junction-to-Ambient (Note 1) 45 °C/W
RθJC Maximum Junction-to-Case (Note 1) 1.4 °C/W
Electrical Characteristics (TJ=25°C unless otherwise specified)
VGS (th) Gate Threshold Voltage VDS =VGS, ID =250μA 1.2 1.6 2.2 V
BVDSS Drain-Source Breakdown Voltage VGS =0V, ID =250μA 40 - - V
IGSS Gate-Source Leakage Current VDS =0V, VGS =±20V - - ±100 nA
IDSS Drain-Source Leakage Current VDS =32V, VGS =0V, TJ =25°C - - 1 μA
IDSS Drain-Source Leakage Current VDS =32V, VGS =0V, TJ =55°C - - 5 μA
RDS (on) Static Drain-Source On-Resistance VGS =10V, ID =50A (Note 2) - 1.7 2.6 mΩ
RDS (on) Static Drain-Source On-Resistance VGS =4.5V, ID =50A (Note 2) - - - mΩ
EAS Single Pulse Avalanche Energy VDD =25V, L =0.1mH, IAS =60A (Note 5) 180 - - mJ
VSD Diode Forward Voltage IS =1A, VGS =0V, TJ =25°C (Note 2) - - 1.2 V
IS Continuous Source Current VG =VD =0V, Force Current (Note 1, 6) - - 180 A
ISM Pulsed Source Current (Note 2, 6) - - 400 A
Dynamic Characteristics
Qg Total Gate Charge VDS =15V ID =20A VGS =10V (Note 2) - 45 - nC
Qgs Gate-Source Charge - 12 - nC
Qgd Gate-Drain Charge - 18.5 - nC
td(on) Turn-On Delay Time VDS =15V ID =20A VGS =10V RG =3.3Ω (Note 2) - 18.5 - ns
tr Rise Time - 9 - ns
td(off) Turn-Off Delay Time - 58.5 - ns
tf Fall Time - 32 - ns
CISS Input Capacitance VDS =20V VGS =0V f =1.0MHz - 3972 - pF
COSS Output Capacitance - 1119 - pF
CRSS Reverse Transfer Capacitance - 82 - pF
Rg Gate Resistance VDS =0V, VGS =0V, f =1.0MHz - 1.0 - Ω

Notes:

  • 1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
  • 2. The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%.
  • 3. The EAS data shows maximum rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=80A.
  • 4. The power dissipation is limited by 150°C junction temperature.
  • 5. The Min. value is 100% EAS tested guarantee.
  • 6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.

2412061551_Bruckewell-MSH40N01_C42407734.pdf

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