Robust N Channel MOSFET BORN BMF12N60G with 12A Continuous Drain Current and High Power Dissipation
Key Attributes
Model Number:
BMF12N60G
Product Custom Attributes
Drain To Source Voltage:
600V
Configuration:
-
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-
RDS(on):
650mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF
Number:
1 N-channel
Output Capacitance(Coss):
180pF
Pd - Power Dissipation:
156W
Input Capacitance(Ciss):
2.107nF
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
BMF12N60G
Package:
TO-220F
Product Description
Product Overview
The BMx12N60 is a high-performance N-Channel MOSFET from BORN SEMICONDUCTOR, INC., designed with advanced planar process technology. It offers a drain-source voltage (VDSS) of 600V and a continuous drain current (ID) of 12A, with a typical on-resistance (RDS(ON)) of 0.56 at VGS=10V. This MOSFET is characterized by its fast switching speeds and good EMI performance, making it suitable for various power management applications, including load switching and PWM applications.
Product Attributes
- Brand: BORN SEMICONDUCTOR, INC.
- Product Line: BMx12N60 N-Channel MOSFET
- Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
- Compliance: Lead-free in compliance with EU RoHS 2011/65/EU directive
- Certifications: UL Flammability Classification Rating 94V-0
- Note: Order codes with "G" indicate the use of a thick frame.
Technical Specifications
| Model | Package | VDSS (V) | ID (A) | RDS(ON) @VGS=10V (, Typ) | Power Dissipation (W) | Junction Temperature Range (C) | Ordering Information |
|---|---|---|---|---|---|---|---|
| BMx12N60 | TO-220AB | 600 | 12 | 0.56 | 156 | -55 to +150 | BME12N60/G (50pcs/tube, 1kpcs/box, 5kpcs/carton) |
| BMx12N60 | TO-220F | 600 | 12 | 0.56 | 28 | -55 to +150 | BMF12N60/G (50pcs/tube, 1kpcs/box, 5kpcs/carton) |
| BMx12N60 | TO-263 | 600 | 12 | 0.56 | 156 | -55 to +150 | BMK12N60/G (50pcs/tube, 1kpcs/box, 5kpcs/carton) |
| BMx12N60 | TO-263 (Reel) | 600 | 12 | 0.56 | 156 | -55 to +150 | BMK12N60-R/G (800pcs/reel, 800pcs/box, 4kpcs/carton) |
| Symbol | Parameters | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | 600 | V | |||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Continue Drain Current | 12 | A | |||
| IDM | Pulsed Drain Current (Note1) | 48 | A | |||
| PD | Power Dissipation | @TA=25C | 156 (TO-220AB/TO-263) / 28 (TO-220F) | W | ||
| EAS | Single Pulse Avalanche Energy (Note1) | 537 | mJ | |||
| TJ | Junction Temperature Range | -55 | +150 | C | ||
| TSTG | Storage Temperature Range | -55 | +150 | C | ||
| RJC | Thermal Resistance, Junction to Case | @TA=25C | 0.8 (TO-220AB/TO-263) / 4.4 (TO-220F) | C/W | ||
| RJA | Thermal Resistance, Junction to Ambient | @TA=25C | 64 (TO-220AB) / 49 (TO-220F) | C/W | ||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID=250uA | 600 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 600V, VGS=0V | 1 | A | ||
| IGSS | Gate-Source Leakage Current | VGS = 30V, VDS=0V | 100 | nA | ||
| VGS(TH) | Gate Threshold Voltage | VGS = VDS, ID=250uA | 2 | 4 | V | |
| RDS(on) | Static Drain-source On Resistance | VGS=10V, ID=6A | 0.56 | 0.65 | ||
| gfs | Forward Transconductance | VDS=15V, ID=6A | 12 | S | ||
| Ciss | Input capacitance | VDS = 25V, VGS =0V, f = 1MHz | 2107 | pF | ||
| Coss | Output capacitance | 180 | pF | |||
| Crss | Reverse transfer capacitance | 21 | pF | |||
| Td(on) | Turn-on delay time (Note1) | VDD=300V, ID =12A, RG =24, VGS=10V | 31 | ns | ||
| Tr | Turn-on Rise time (Note1) | 40 | ns | |||
| Td(off) | Turn-off Delay Time (Note1) | 135 | ns | |||
| Tf | Turn-off Fall time (Note1) | 49 | ns | |||
| Qgs | Gate to Source Charge (Note1) | VDD=300V, VGS=10V, ID=12A | 11.6 | nC | ||
| Qgd | Gate to Drain Charge (Note1) | 15 | nC | |||
| Qg | Total Gate Charge (Note1) | 45 | nC | |||
| VSD | Diode Forward Voltage | ISD=12A | 1.2 | V | ||
| IS | Diode Forward Current | 12 | A | |||
| ISM | Diode Pulsed Current | 48 | A | |||
| Trr | Reverse Recovery Time (Note1) | ISD =12A, VGS=0V, dIF/dt=100A/s | 560 | ns | ||
| Qrr | Reverse Recovery Charge (Note1) | 5.1 | C |
Note1: Pulse test: 300 s pulse width, 2% duty cycle.
Note: Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information.
2412021443_BORN-BMF12N60G_C42402387.pdf
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