N Channel MOSFET Bruckewell MSD65N045SB 65 Volt Featuring RoHS Compliance and Trench DMOS Technology
Key Attributes
Model Number:
MSD65N045SB
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
65V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-50℃~+150℃
RDS(on):
7.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
24pF
Number:
1 N-channel
Output Capacitance(Coss):
2.976nF
Pd - Power Dissipation:
94W
Input Capacitance(Ciss):
2.976nF@25V
Gate Charge(Qg):
54nC@10V
Mfr. Part #:
MSD65N045SB
Package:
TO-252
Product Description
Product Overview
The MSD65N045SB is an N-Channel 65-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is optimized to minimize on-state resistance (RDS(ON)), enhance switching performance, and improve the device's ability to withstand high energy pulses in avalanche and commutation modes. It is designed for high efficiency and fast switching applications. The device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Typical applications include networking, load switches, synchronous rectifiers, and quick chargers.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Technology: Trench DMOS
- Certifications: RoHS Compliant, Green Device Available
- Reliability: 100% EAS Guaranteed
- Package Type: TO-252
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units | |||
|---|---|---|---|---|---|---|---|---|---|
| Features | |||||||||
| RDS(ON) | On-Resistance | VGS = 10V | - | 4.7 | - | m | |||
| - | Fast switching | - | - | ||||||
| - | Improve dv/dt Capability | - | - | ||||||
| EAS | 100% EAS Guaranteed | - | - | ||||||
| - | Green Device Available | - | - | ||||||
| Maximum Ratings and Electrical Characteristics | |||||||||
| VDS | Drain-Source Voltage | - | - | - | 65 | V | |||
| VGS | Gate-Source Voltage | - | -20 | - | +20 | V | |||
| ID | Continuous Drain Current (TC =25C) | - | - | - | 80 | A | |||
| ID | Continuous Drain Current (TC =100C) | - | - | - | 50 | A | |||
| IDM | Pulsed Drain Current | - | - | - | 320 | A | |||
| IAS | Single Pulse Avalanche Current (L =0.1mH) | - | - | - | 59 | A | |||
| EAS | Single Pulse Avalanche Energy (L =0.1mH) | - | - | - | 174 | mJ | |||
| PD | Power Dissipation (TC =25C) | - | - | - | 94 | W | |||
| PD | Power Dissipation (TA =25C) | - | - | - | 2 | W | |||
| TJ/TSTG | Operating Junction and Storage Temperature | - | -50 | - | +150 | C | |||
| Thermal Resistance Ratings | |||||||||
| RJA | Maximum Junction-to-Ambient | - | - | - | 62 | C/W | |||
| RJC | Maximum Junction-to-Case | - | - | - | 1.33 | C/W | |||
| Electrical Characteristics (TJ=25C unless otherwise specified) | |||||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =250A | 1.0 | 1.5 | 2.5 | V | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =250A | 65 | - | - | V | |||
| gfs | Forward Transconductance | VDS =10V, ID =3A | - | 12 | - | S | |||
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =20V | - | - | 100 | nA | |||
| IDSS | Drain-Source Leakage Current | VDS =60V, VGS =0V, TJ =25C | - | - | 1 | A | |||
| IDSS | Drain-Source Leakage Current | VDS =48V, VGS =0V, TJ =85C | - | - | 10 | A | |||
| RDS (on) | Static Drain-Source On-Resistance | VGS =10V, ID =20A | - | - | 4.5 | m | |||
| RDS (on) | Static Drain-Source On-Resistance | VGS =4.5V, ID =10A | - | - | 7.5 | m | |||
| EAS | Single Pulse Avalanche Energy | VDD =25V, L =0.1mH, IAS =30A | 45 | - | - | mJ | |||
| VSD | Diode Forward Voltage | IS =20A, VGS =0V, TJ =25C | - | - | 1.2 | V | |||
| IS | Continuous Source Current | VG =VD =0V, Force Current | - | - | 60 | A | |||
| ISM | Pulsed Source Current | - | - | - | 120 | A | |||
| Dynamic Characteristics | |||||||||
| Qg | Total Gate Charge | VDS =48V, ID =5A, VGS =10V | - | 54 | - | nC | |||
| Qgs | Gate-Source Charge | - | - | 5.2 | - | nC | |||
| Qgd | Gate-Drain Charge | - | - | 16.1 | - | nC | |||
| td(on) | Turn-On Delay Time | VDS =30V, ID =1A, VGS =10V, RG =6 | - | 10.6 | - | ns | |||
| tr | Rise Time | - | - | 16.5 | - | ns | |||
| td(off) | Turn-Off Delay Time | - | - | 48 | - | ns | |||
| tf | Fall Time | - | - | 78 | - | ns | |||
| CISS | Input Capacitance | VDS =25V, VGS =0V, f =1.0MHz | - | 2976 | - | pF | |||
| COSS | Output Capacitance | - | - | 950 | - | pF | |||
| CRSS | Reverse Transfer Capacitance | - | - | 24 | - | pF | |||
| Rg | Gate Resistance | VGS =VDS =0V, f =1.0MHz | - | 1.3 | - | ||||
| Package Dimensions (TO-252) | |||||||||
| REF. | Millimeter | Min. | Nom. | Max. | REF. | Millimeter | |||
| A | - | 2.20 | 2.30 | 2.38 | E1 | - | 4.40 | - | - |
| A1 | - | 0 | - | 0.127 | e | - | 2.286 | BSC | - |
| b | - | 0.64 | 0.76 | 0.88 | H | - | 9.40 | 10.00 | 10.40 |
| b2 | - | 0.77 | 0.84 | 1.14 | L | - | 1.40 | 1.52 | 1.77 |
| b3 | - | 5.21 | 5.34 | 5.46 | L1 | - | 2.743 | Ref. | - |
| c | - | 0.45 | 0.50 | 0.60 | L2 | - | 0.508 | BSC | - |
| c2 | - | 0.45 | 0.50 | 0.58 | L3 | - | 0.89 | - | 1.27 |
| D | - | 6.00 | 6.10 | 6.223 | L4 | - | 0.64 | - | 1.01 |
| D1 | - | 5.21 | - | - | L5 | - | - | - | - |
| E | - | 6.40 | 6.60 | 6.731 | 0 | - | 10 | - | |
Packing & Order Information: 3,000/Reel
Marking: MSD65N045SB
Publication Order Number: MSH65N045SB
Revision: Rev. A -2020
2412061551_Bruckewell-MSD65N045SB_C42407728.pdf
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