1200V SiC N-Channel MOSFET Bruckewell CMS120N080WK Fast Switching for High Voltage Power Electronics
Key Attributes
Model Number:
CMS120N080WK
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
35A
Operating Temperature -:
-55℃~+175℃
RDS(on):
77mΩ@20V
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Output Capacitance(Coss):
62pF
Input Capacitance(Ciss):
1.377nF
Pd - Power Dissipation:
188W
Gate Charge(Qg):
61nC
Mfr. Part #:
CMS120N080WK
Package:
TO-247-4
Product Description
Product Overview
The Bruckewell CMS120N080WK is a SiC N-Channel 1200-V (D-S) MOSFET designed for high-speed switching applications. It offers high blocking voltage and fast reverse recovery, leading to low capacitance and high system efficiency. This MOSFET is ideal for demanding applications such as solar inverters, switch mode power supplies, UPS, induction heating and welding, EV charging stations, and high voltage DC/DC converters. Its easy paralleling capability further enhances its versatility in various power electronics designs.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Product Type: SiC N-Channel MOSFET
- Package Type: TO-247-4
- Certifications: RoHS Compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Maximum Ratings and Electrical Characteristics | ||||||
| VDS | Drain-Source Voltage | 1200 | V | |||
| VGS | Gate-Source Voltage | -5 | 20 | V | ||
| ID | Continuous Drain Current (TC =25C) | 35 | A | |||
| ID | Continuous Drain Current(TC =100C) | 25 | A | |||
| ID,pulse | Pulsed Drain Current | 80 | A | |||
| Ptot | Power Dissipation (TC =25C) | 188 | W | |||
| EAS | Single Pulse Avalanche Energy | IAS=20A ,V=50V, L =1mH | 200 | mJ | ||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | 175 | C | ||
| Thermal Resistance Ratings | ||||||
| RJA | Maximum Junction-to-Ambient | 40 | C/W | |||
| RJC | Maximum Junction-to-Case | 0.8 | C/W | |||
| Static Electrical Characteristics | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =10mA | 2.0 | 2.8 | 4.0 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =1mA | 1200 | - | - | V |
| IGSS+ | Gate-Source Leakage Current | VDS =0V, VGS =20V | - | 0.1 | 100 | nA |
| IGSS- | Gate-Source Leakage Current | VDS =0V, VGS =-5V | - | - | -100 | nA |
| IDSS | Drain-Source Leakage Current | VDS =1200V, VGS =0V | - | - | 1.0 | A |
| IDSS | Drain-Source Leakage Current | VDS =1200V, VGS =0V, TJ =175C | - | 1.0 | - | A |
| RDS (on) | Static Drain-Source On-Resistance | VGS =20V, ID =20A | - | 77 | 100 | m |
| RDS (on) | Static Drain-Source On-Resistance | VGS =20V, ID =10A | - | 71 | 90 | m |
| RDS (on) | Static Drain-Source On-Resistance | VGS =20V, ID =20A, TJ =125C | - | 106 | - | m |
| RDS (on) | Static Drain-Source On-Resistance | VGS =20V, ID =20A, TJ =175C | - | 134 | - | m |
| Rg | Gate Input Resistance | f =1MHz,VAC =25mV, D-S short | - | 3.0 | - | |
| AC Electrical Characteristics | ||||||
| Qg | Total Gate Charge | VDD=800 V, IDS=20 A, VGS=-5/20V | - | 61 | - | nC |
| Qgs | Gate-Source Charge | - | 24 | - | nC | |
| Qgd | Gate-Drain Charge | - | 14 | - | nC | |
| td(on) | Turn-On Delay Time | VDD=800 V, IDS=20 A, RG(ext)=2.5 , VGS=-5/+20 V, L=975 H | - | 9 | - | ns |
| tr | Rise Time | - | 4 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 15 | - | ns | |
| tf | Fall Time | - | 10 | - | ns | |
| CISS | Input Capacitance | VGS=0 V, VDS=1000 V, f=200 kHz, VAC=25mV | - | 1377 | - | pF |
| COSS | Output Capacitance | - | 62 | - | pF | |
| CRSS | Reverse Transfer Capacitance | - | 4 | - | pF | |
| Eoss | Coss Stored Energy | - | 38 | - | J | |
| Eon | Turn-On Switching Energy | VDD=800 V, IDS=20 A, RG(ext)=2.5 , VGS=-5/+20 V, L=975 H | - | 208 | - | J |
| Eoff | Turn-Off Switching Energy | - | 25 | - | J | |
| Etot | Total Switching Energy | - | 233 | - | J | |
| Body Diode Characteristics | ||||||
| IS | Max Continuous Diode Forward Current | VGS=-5 V, TC=25 C | - | - | 43 | A |
| VSD | Diode Forward Voltage | VGS=-5 V, IS=10 A | - | 3.8 | - | V |
| trr | Reverse Recovery Time | IS=20 A, VR=800 V, VGS=-5 V, di/dt=8 A/s | - | 8 | - | ns |
| Qrr | Reverse Recovery Charge | - | 130 | - | nC | |
| Irrm | Peak Reverse Recovery Current | - | 29 | - | A | |
2411261511_Bruckewell-CMS120N080WK_C29781282.pdf
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