86--136 6733 2386
quality NPN silicon epitaxial planar transistor CBI 2N5551U designed for high voltage amplifier applications factory
quality NPN silicon epitaxial planar transistor CBI 2N5551U designed for high voltage amplifier applications factory

NPN silicon epitaxial planar transistor CBI 2N5551U designed for high voltage amplifier applications

Key Attributes
Model Number: 2N5551U
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-
Mfr. Part #:
2N5551U
Package:
SOT-89
Product Description

Product Overview

The 2N5551U is an NPN Silicon Epitaxial Planar Transistor designed for general-purpose, high-voltage amplifier applications. It offers reliable performance in various electronic circuits requiring amplification at high voltages.

Product Attributes

  • Brand: 2N
  • Model: 5551U
  • Type: NPN Silicon Epitaxial Planar Transistor
  • Package: SOT-89

Technical Specifications

Parameter Symbol Value Unit Conditions
Absolute Maximum Ratings
Collector Base Voltage VCBO 180 V (Ta = 25 OC)
Collector Emitter Voltage VCEO 160 V (Ta = 25 OC)
Emitter Base Voltage VEBO 6 V (Ta = 25 OC)
Collector Current IC 600 mA (Ta = 25 OC)
Power Dissipation Ptot 500 mW (Ta = 25 OC)
Junction Temperature Tj 150 OC
Storage Temperature Range Tstg -55 to +150 OC
Characteristics at Ta = 25 OC
DC Current Gain hFE 80 - VCE = 5 V, IC = 1 mA
DC Current Gain hFE 80 - VCE = 5 V, IC = 10 mA
DC Current Gain hFE 30 - VCE = 5 V, IC = 50 mA
Collector Base Cutoff Current ICBO -50 nA VCB = 120 V
Emitter Base Cutoff Current IEBO -50 nA VEB = 4 V
Collector Base Breakdown Voltage V(BR)CBO 180 V IC = 100 A
Collector Emitter Breakdown Voltage V(BR)CEO 160 V IC = 1 mA
Emitter Base Breakdown Voltage V(BR)EBO 6 V IE = 10 A
Collector Emitter Saturation Voltage VCE(sat) 0.15 V IC = 10 mA, IB = 1 mA
Collector Emitter Saturation Voltage VCE(sat) 0.2 V IC = 50 mA, IB = 5 mA
Base Emitter Saturation Voltage VBE(sat) 1 V IC = 10 mA, IB = 1 mA
Base Emitter Saturation Voltage VBE(sat) 1 V IC = 50 mA, IB = 5 mA
Gain Bandwidth Product fT 100-300 MHz VCE = 10 V, IC = 10 mA, f = 100 MHz
Collector Output Capacitance Cob 6 pF VCB = 10 V, f = 1 MHz

2410121317_CBI-2N5551U_C2836111.pdf

Related Products
quality Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads factory
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
quality Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly factory
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
quality Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage factory
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
quality N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities factory
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.