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quality Power Switching N Channel MOSFET BORN BNT15N10 with Low Gate Charge and 15A Continuous Drain Current Rating factory
quality Power Switching N Channel MOSFET BORN BNT15N10 with Low Gate Charge and 15A Continuous Drain Current Rating factory

Power Switching N Channel MOSFET BORN BNT15N10 with Low Gate Charge and 15A Continuous Drain Current Rating

Key Attributes
Model Number: BNT15N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
RDS(on):
88mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Input Capacitance(Ciss):
890pF
Output Capacitance(Coss):
60pF
Pd - Power Dissipation:
34.5W
Gate Charge(Qg):
24nC@10V
Mfr. Part #:
BNT15N10
Package:
TO-252-2
Product Description

Product Overview

The BNT15N10 is an N-Channel MOSFET featuring Trench Technology for enhanced performance. It offers a Drain-Source Voltage (VBR(DSS)) of 100V and a continuous Drain Current (ID) of 15A. Key advantages include low RDS(ON) at 88m (typ.) at 10V, low gate charge, and low gate resistance. This MOSFET is designed for power switching applications, including MB/VGA Vcore, SMPS 2nd Synchronous Rectifier, and lighting solutions.

Product Attributes

  • Brand: BNT
  • Type: N-Channel MOSFET
  • Technology: Trench Technology
  • Package: TO-252-2

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID=250uA 100 V
Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS=0V 1 uA
Gate-Body Leakage Current IGSS VGS = 20V, VDS=0V 100 nA
Gate Threshold Voltage VGS(TH) VGS = VDS, ID=250uA 1.0 1.5 2.5 V
Static Drain-source On Resistance RDS(ON) VGS=10V, ID=12A 88 110 m
Static Drain-source On Resistance RDS(ON) VGS=4.5V, ID=8A 96 140 m
Forward Transconductance gfs VDS=5V, ID=4.5A 13 S
Input capacitance Ciss VDS =25V, VGS =0V, f = 1MHz 890 pF
Output capacitance Coss VDS =25V, VGS =0V, f = 1MHz 60 pF
Reverse transfer capacitance Crss VDS =25V, VGS =0V, f = 1MHz 25 pF
Static Drain-source On Resistance Rg VGS=VDS=0V, f=1MHz 1.5
Turn-on delay time Td(on) VDD=25V, VGS=10V, RG =1, RL =5 14.2 nS
Turn-on Rise time Tr VDD=25V, VGS=10V, RG =1, RL =5 33.7 nS
Turn -Off Delay Time Td(off) VDD=25V, VGS=10V, RG =1, RL =5 40.2 nS
Turn -Off Fall time Tf VDD=25V, VGS=10V, RG =1, RL =5 6 nS
Gate to Drain Charge Qg VDS=80V, VGS=10V, ID=10A 24 nC
Gate to Source Charge Qgs VDS=80V, VGS=10V, ID=10A 5 nC
Gate to Drain Charge Qgd VDS=80V, VGS=10V, ID=10A 8 nC
Diode Forward Voltage VSD VGS=0V,IS=1A 1.2 V
Continuous Source Current IS VGS=0V,IS=1A 12 A
Pulsed Sourse Current ISM VGS=0V,IS=1A 24 A
Reverse Recovery Time Trr IF=4.5A, dIF/dt=500A/s 21 ns
Reverse Recovery Charge Qrr IF=4.5A, dIF/dt=500A/s 27.3 nC
Drain-Source Voltage VDS Absolute Maximum Ratings 100 V
Gate -Source Voltage VGS Absolute Maximum Ratings 20 V
Drain Current ID TC=25C, Absolute Maximum Ratings 15 A
Drain Current ID TC=100C, Absolute Maximum Ratings 8.5 A
Drain Current-Pulse IDM TA=25C, Absolute Maximum Ratings 60 A
Single Pulsed Avalanche Current IAS Absolute Maximum Ratings 12.5 A
Single Pulsed Avalanche Energy EAS Absolute Maximum Ratings 16 mJ
Power Dissipation PD TC=25C, Absolute Maximum Ratings 34.5 W
Thermal Resistance Junction to Ambient RJA Absolute Maximum Ratings 50 C/W
Thermal Resistance Junction to Case RJC Absolute Maximum Ratings 3.6 C/W
Junction Temperature TJ Absolute Maximum Ratings 150 C
Storage Temperature Range Tstg Absolute Maximum Ratings -55 +150 C

2504231555_BORN-BNT15N10_C48533911.pdf

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