N Channel MOSFET Bruckewell MSHM30N46 30 Volt Drain Source Voltage for Synchronous Buck Converter
Key Attributes
Model Number:
MSHM30N46
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
46A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
131pF
Number:
-
Output Capacitance(Coss):
163pF
Input Capacitance(Ciss):
1.317nF
Pd - Power Dissipation:
29W
Gate Charge(Qg):
12.8nC@4.5V
Mfr. Part #:
MSHM30N46
Package:
PDFN3.3x3.3-8
Product Description
Product Overview
The MSHM30N46 is a high-performance N-Channel 30-V (D-S) MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Typical applications include MB, VGA, Vcore, POL, and SMPS 2nd SR.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Product Type: N-Channel MOSFET
- Voltage Rating: 30 V (D-S)
- Package Type: PDFN 3.3X3.3
- Certifications: RoHS Compliant, Green Device Available
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Parameter | Value | Units |
|---|---|---|
| Model | MSHM30N46 | - |
| Drain-Source Voltage (VDS) | 30 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (TC =25°C) | 464 | A |
| Continuous Drain Current (TC =100°C) | 29 | A |
| Pulsed Drain Current (IDM) | 92 | A |
| Single Pulse Avalanche Current (IAS) (L =0.1mH) | 34 | A |
| Single Pulse Avalanche Energy (EAS) (L =0.1mH) | 57.8 | mJ |
| Power Dissipation (PD) (TC =25°C) | 29 | W |
| Power Dissipation (PD) (TA =25°C) | 1.67 | W |
| Operating Junction and Storage Temperature (TJ/TSTG) | -55 to +150 | °C |
| RDS(ON) @ VGS =10V, ID =15A | 9 | mΩ |
| RDS(ON) @ VGS =4.5V, ID =10A | 15 | mΩ |
| Gate Threshold Voltage (VGS(th)) @ VDS =VGS, ID =250μA | 1.0 - 2.5 | V |
| Drain-Source Breakdown Voltage (BVDSS) @ VGS =0V, ID =250μA | 30 | V |
| Total Gate Charge (Qg) @ VDS =20V, ID =12A, VGS =4.5V | 12.8 | nC |
| Input Capacitance (CISS) @ VDS =15V, VGS =0V, f =1.0MHz | 1317 | pF |
| Output Capacitance (COSS) @ VDS =15V, VGS =0V, f =1.0MHz | 163 | pF |
| Reverse Transfer Capacitance (CRSS) @ VDS =15V, VGS =0V, f =1.0MHz | 131 | pF |
| Gate Resistance (Rg) @ VGS =VDS =0V, f =1.0MHz | 1.7 | Ω |
| Package Dimensions (E1) | 3.00 - 3.20 | mm |
| Package Dimensions (E2) | 2.39 - 2.59 | mm |
| Package Dimensions (D) | 3.25 - 3.45 | mm |
| Package Dimensions (D1) | 3.00 - 3.20 | mm |
| Package Dimensions (D2) | 1.78 - 1.98 | mm |
| Package Dimensions (E) | 3.20 - 3.40 | mm |
| Packing | 3,000/Reel | - |
2409291004_Bruckewell-MSHM30N46_C22465533.pdf
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