DC DC converter P Channel MOSFET BORN BMDFN2301 with trench technology and low gate threshold voltage

Key Attributes
Model Number: BMDFN2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
740mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
650mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
19pF
Number:
1 P-Channel
Output Capacitance(Coss):
25pF
Pd - Power Dissipation:
320mW
Input Capacitance(Ciss):
104pF
Gate Charge(Qg):
1.1nC@4.5V
Mfr. Part #:
BMDFN2301
Package:
DFN1006-3L
Product Description

Product Overview

The BMDFN2301 is a P-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is housed in a DFN1006-3L surface mount package and is suitable for DC-DC converter circuits and power switch applications. Key electrical characteristics include a low gate threshold voltage and excellent on-resistance performance across various gate-source voltages.

Product Attributes

  • Brand: Born-TW
  • Package Type: DFN1006-3L
  • Marking: M2301

Technical Specifications

Parameter Symbol Test Conditions Typical Maximum Unit
Absolute Maximum Ratings
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±10 V
Continuous Drain Current (a) ID TA=25°C -0.74 -0.69 A
Continuous Drain Current (a) ID TA=70°C -0.59 -0.55 A
Maximum Power Dissipation (a) PD TA=25°C 0.32 0.27 W
Maximum Power Dissipation (a) PD TA=70°C 0.20 0.18 W
Continuous Drain Current (b) ID TA=25°C -0.70 -0.65 A
Continuous Drain Current (b) ID TA=70°C -0.56 -0.52 A
Maximum Power Dissipation (b) PD TA=25°C 0.28 0.25 W
Maximum Power Dissipation (b) PD TA=70°C 0.18 0.16 W
Pulsed Drain Current (c) IDM -1.5 A
Operating Junction Temperature TJ -55 150 °C
Lead Temperature TL 260 °C
Storage Temperature Range Tstg -55 150 °C
Electrical Characteristics @TA=25°C unless otherwise noted
Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = -250uA -20 V
Zero Gate Voltage Drain Current IDSS VDS =-16 V, VGS = 0V -1 uA
Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±10V ±5 uA
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250uA -0.45 -1.0 V
Drain-to-source On-resistance RDS(on) VGS = -4.5V, ID = -1.4A 230 390
Drain-to-source On-resistance RDS(on) VGS = -2.8V, ID = -0.8A 320 480
Drain-to-source On-resistance RDS(on) VGS = -2.5V, ID = -0.6A 355 620
Drain-to-source On-resistance RDS(on) VGS = -1.8V, ID = -0.5A 650 790
Input Capacitance CISS VGS = 0 V, f = 1.0 MHz, VDS = -15 V 104 pF
Output Capacitance COSS 25 pF
Reverse Transfer Capacitance CRSS 19 pF
Total Gate Charge QG(TOT) VGS = -4.5 V, VDS = -10 V, ID = -1A 1.1 nC
Threshold Gate Charge QG(TH) 0.25 nC
Gate-to-Source Charge QGS 0.38 nC
Gate-to-Drain Charge QGD 0.47 nC
Turn-On Delay Time td(ON) VGS = -4.5 V, VDS = -10 V, RG=6 Ω,ID=-1A 7.2 ns
Rise Time tr 7.5 ns
Turn-Off Delay Time td(OFF) 18.5 ns
Fall Time tf 10.7 ns
Forward Voltage VSD VGS = 0 V, IS = -0.5A -0.5 -1.2 V
Thermal Resistance Ratings
Junction-to-Ambient Thermal Resistance (a) RθJA t ≤ 10 s 340 395 °C/W
Junction-to-Ambient Thermal Resistance (a) RθJA Steady State 390 455 °C/W
Junction-to-Ambient Thermal Resistance (b) RθJA t ≤ 10 s 387 441 °C/W
Junction-to-Ambient Thermal Resistance (b) RθJA Steady State 445 505 °C/W
Junction-to-Case Thermal Resistance RθJC Steady State 240 285 °C/W
Package Information
Package Type DFN1006-3L
Dimensions (mm) A MIN 0.45 MAX 0.50
Dimensions (mm) A1 MIN 0.00 MAX 0.02
Dimensions (mm) b MIN 0.45 MAX 0.50
Dimensions (mm) b1 MIN 0.10 MAX 0.15
Dimensions (mm) C MIN 0.12 MAX 0.18
Dimensions (mm) D MIN 0.95 MAX 1.05
Dimensions (mm) E MIN 0.55 MAX 0.65
Dimensions (mm) E1 MIN 0.15 MAX 0.25
Dimensions (mm) L MIN 0.20 MAX 0.30
Dimensions (mm) L1 MIN 0.05 MAX 0.10
Ordering Information
Order Code Package Base Qty Delivery Mode Marking
BMDFN2301 DFN1006-3L 10K Tape and reel M2301

2410121735_BORN-BMDFN2301_C18199556.pdf

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